X-On Electronics has gained recognition as a prominent supplier of TGA4537-SM Waffle Pack RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA4537-SM Waffle Pack RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA4537-SM Waffle Pack Qorvo

TGA4537-SM Waffle Pack electronic component of Qorvo
TGA4537-SM Waffle Pack Qorvo
TGA4537-SM Waffle Pack RF Amplifier
TGA4537-SM Waffle Pack  Semiconductors

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See Product Specifications
Part No. TGA4537-SM Waffle Pack
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 29-35GHz 1Watt Gain 18dB Psat 31dBm
Datasheet: TGA4537-SM Waffle Pack Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 64.416
5 : USD 62.464
10 : USD 58.1846
25 : USD 57.2344
100 : USD 53.3398
200 : USD 53.3398
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Amplifier Type
Brand
Number Of Channels
Input Return Loss
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGA4537-SM Waffle Pack from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA4537-SM Waffle Pack and other electronic components in the RF Amplifier category and beyond.

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TGA4537-SM 29 35 GHz 1W Power Amplifier Applications Point-to-Point Radio Ka-band Sat-Com 26 lead 5x5mm ACQFN package Product Features Functional Block Diagram Frequency Range: 29 35 GHz Power: 31 dBm Psat, 30 dBm P1dB Gain: 18 dB TOI: 38 dBm at 20 dBm/tone Integrated Power Detector Bias: Vd = 6 V, Idq = 1100 mA, Vg = -0.55 V Typical Package Dimensions: 5.0 x 5.0 x 1.3 mm General Description Pin Configuration The TriQuint TGA4537-SM is a Ka-Band Power Pin No. Label Amplifier with integrated power detector. The 1, 2, 4, 5, 6, 12, 13, 14, GND TGA4537-SM operates from 29 35 GHz and is 15, 17, 18, 19, 26 designed using TriQuints power pHEMT production 3 RF IN process. 7, 25 VG1 8, 24 VG23 The TGA4537-SM typically provides 31 dBm of saturated output power with small signal gain of 18 9, 23 VD12 dB. Third Order Intercept is 38 dBm at 20 dBm SCL. 10, 22 VD3 11 NC The TGA4537-SM is available in a low-cost, surface 16 RFOUT mount 26 lead 5x5 ACQFN package and is ideally 20 VDET suited for Point-to-Point Radio. 21 VREF Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part No. ECCN Description TGA4537-SM 3A001.b.2.d Ka-Band Power Amplifier Standard T/R size = 200 pieces on a 7 reel Preliminary Datasheet: Rev B 06-01-16 Disclaimer: Subject to change without notice - 1 of 14 - 2014 TriQuint www.triquint.com TGA4537-SM 29 35 GHz 1W Power Amplifier Recommended Operating Absolute Maximum Ratings Conditions Parameter Rating Parameter Min Typ Max Units Drain Voltage,Vd 6.5 V Operating Temp. Range -40 +85 C Gate Voltage,Vg -3.5 to 0 V Vd 6.0 V Drain to Gate Voltage, Vd Vg 10 V Idq 1100 mA Drain Current, Id 2.5 A Id drive 1750 mA Gate Current, Ig -7 to +52 mA Power Dissipation, Pdiss 16.2 W Vg -0.55 V RF Input Power, CW, T = 25 C 25 dBm Channel Temperature, Tch 200 C Ig drive (Under RF Drive) 15 mA Mounting Temperature (30 sec) 260 C Storage Temperature -40 to 150 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Operation of this device outside the parameter ranges recommended operating conditions. given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: Vd =+6 V, Idq = 1100 mA, Vg =-0.55 V, Temp= +25C, Z = 50 0 Parameter Conditions Min Typ Max Units Operational Frequency Range 29 35 GHz Gain 18 dB Input Return Loss 6 dB Output Return Loss 8 dB Output Power Saturation 31 dBm Output Power 1 dB Gain Compression 30 dBm Output TOI 20 dBm/Tone Pout/tone 38 dBm Gain Temperature Coefficient -0.03 dB/C -0.01 dBm/C Power Temperature Coefficient Preliminary Datasheet: Rev B 06-01-16 Disclaimer: Subject to change without notice - 2 of 14 - 2014 TriQuint www.triquint.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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