TGA4538 37-40 GHz Power Amplifier General Description The Qorvo TGA4538 operates from 37-40 GHz and is designed using Qorvos 3MI 0.15 um Power pHEMT production process. The TGA4538 provides a nominal 29.5 dBm of saturated power with a small signal gain of 24 dB at VD = 5 V and I = 600 mA. When biased at 6 V, 600 mA, TGA4538 DQ provides a nominal 30.5 dBm of saturated power with a small signal gain of 24 dB. The TGA4538 is suitable for a variety of systems such as Point-to-Point radio and Millimeter-Wave Communications. Measured Performance Bias conditions: VD = 5 V, IDQ = 600 mA, VG = -0.63 V Typical The TGA4538 is 100% DC and RF tested on-wafer to ensure performance compliance. The TGA4538 has a protective surface passivation layer providing 30 25 environmental robustness. 20 15 S21 10 5 S22 0 -5 S11 -10 -15 -20 Product Features -25 -30 Frequency Range: 37-40 GHz -35 OTOI: 37 dBm 37 37.5 38 38.5 39 39.5 40 Frequency (GHz) Small Signal Gain: 24 dB 29.5 dBm P , 28 dBm P1dB 5 V, 600 mA SAT 40 30.5 dBm P , 29.5 dBm P1dB 6 V, 600 mA SAT 38 Chip Dimensions: 2.30 x 1.66 x 0.10 mm 36 34 32 30 28 26 Pout = 18 dBm/Tone 24 22 20 37 37.5 38 38.5 39 39.5 40 Frequency (GHz) Applications Ordering Information Point-to-Point Radio Part Description Millimeter Wave Communications TGA4538 TGA4538 Power Amplifier, Gel Pack, Qty 50 Data Sheet Rev A, June 2019 Subject to change without notice 1 of 16 www.qorvo.com S11, S22, S21 (dB) OTOI (dBm) TGA4538 37-40 GHz GaAs Power Amplifier Absolute Maximum Ratings Symbol Parameter Value Units V -V Drain to Gate Voltage 10 V D G V Drain Voltage 6.5 V D VG Gate Voltage Range -5 to 0 V ID Drain Current 1390 mA IG Gate Current Range -4.2 to 92 mA P Input Continuous Wave Power 22 dBm IN T Channel Temperature 200 C CHANNEL T Storage Temperature 55 to 150 C STO Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Recommended Operating Conditions Units Symbol Parameter 1/ Value/Range V V Drain Voltage 5 D mA IDQ Drain Current 600 mA I Drain Current under RF Drive 1000 D Drive V VG Typical Gate Voltage -0.63 RF Characterization Table Bias: V = 5 V, I = 600 mA, V = -0.63 V Typical, Data de-embedded to end of TFN feedings, bondwire effects included. D DQ G Symbol Parameter Test-Conditions Min Nominal Max Units Gain Small Signal Gain f = 37-40 GHz 23 25 dB IRL Input Return Loss f = 37-40 GHz 20 dB ORL Output Return Loss f = 37-40 GHz 15 dB PSAT Saturated Output Power f = 37-40 GHz 29.5 dBm P1dB Output Power 1dB compression f = 37-40 GHz 27 28 dBm OTOI Output TOI f = 37-40 GHz 33 37 dBm Bias: VD = 6 V, IDQ = 600 mA, VG = -0.67 V Typical, Data de-embedded to end of TFN feedings, bondwire effects included. Symbol Parameter Test-Conditions Nominal Units Gain Small Signal Gain f = 37-40 GHz 24 dB IRL Input Return Loss f = 37-40 GHz 19 dB ORL Output Return Loss f = 37-40 GHz 15 dB PSAT Saturated Output Power f = 37-40 GHz 30.5 dBm P1dB Output Power 1dB compression f = 37-40 GHz 29.5 dBm OTOI Output TOI f = 37-40 GHz 37 dBm Data Sheet Rev A, June 2019 Subject to change without notice 2 of 16 www.qorvo.com