TGA4542 37 - 40 GHz 1W Power Amplifier Applications Point to Point Radio Millimeter-wave Communications Military & Space Product Features Functional Block Diagram Vg Vd1 Vd2 Vd3 Vd4 Vref Frequency range: 37 - 40 GHz 14 13 12 11 10 9 Output Power: 32.5 dBm Psat, 31.5 dBm P1dB 8 Gain: 26 dBm Typical Vdet TOI: 38 dBm 18 dBm Output/Tone Integrated Power Detector 7 1 Bias: Vcc = 6V, Icc = 900 mA Typical RF In RF Out Dimension: 2.95 x 2.95 x 0.1 mm 2 3 4 5 6 Vg Vd1 Vd2 Vd3 Vd4 General Description Bond Pad Configuration The TriQuint TGA4542 is a 37 - 40 GHz Power Bond Pad Function Label Amplifier designed using TriQuints power pHEMT 1 RF In production process. 2, 14 Vg 3, 4, 5, 6, 10, 11, 12, 13 Vd The TGA4542 typically provides 31.5 dBm of output power at 1dB gain compression with small signal gain 7 RF Out of 26 dB. Third Order Intercept is 38 dBm at 18 dBm 8 Vdet Output/Tone. 9 Vref The TGA4542 is ideally suited for Point-to-Point Radio, Ka-band communications, and Millimeter-wave communications. Lead-free and RoHS compliant. Evaluation Boards are available upon request. Ordering Information Part No. ECCN Description 37 - 40 GHz 1W Power TGA4542 3A001.b.2.e Amplifier Standard order qty = 50 pieces. Preliminary Data Sheet: Rev - 9/15/12 - 1 of 12 - Disclaimer: Subject to change without notice 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TGA4542 37 - 40 GHz 1W Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Drain to Gate Voltage, Vd - Vg 10V Operating Temp. Range -40 +25 +85 C Drain Voltage, Vd +6.5 V Vd 6.0 V Gate Voltage, Vg -4 to 0 V Id 900 mA Drain Current, Id 2086 mA Id (Under RF Drive) 1500 mA Gate Current, Ig -8.2 to 113 mA Vg -0.7 V Power Dissipation, Pdiss 13.6 W Electrical specifications are measured at specified test RF Input Power, CW, 50, conditions. Specifications are not guaranteed over all 26 dBm T=25C recommended operating conditions. Channel Temperature, Tch 200C Mounting Temperature 320C (30 Seconds) Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: 25 C, Vd = 6 V, Id= 900mA, Vg = -0.7 V Typical. Parameter Conditions Min Typ Max Units Operational Frequency Range 37 40 GHz Gain 26 dB Input Return Loss 8 dB Output Return Loss 15 dB Output Power Saturation 32.5 dBm Output Power 1dB Gain Compression 31.5 dBm Output TOI 18 dBm Output/Tone 38 dBm Gain Temperature Coefficient -0.04 dB/C Power Temperature Coefficient 1dB Gain Compression -0.013 dB/C Preliminary Data Sheet: Rev - 9/15/12 - 2 of 12 - Disclaimer: Subject to change without notice 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network