TGF2819-FS DC 4 GHz, 50 V, 200 W GaN RF Transistor Product Overview The Qorvo TGF2819-FS is a greater-than 200 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request. NI-360 Package Key Features Frequency: DC to 4 GHz 1 Output Power (P ) : 257 W 3dB Functional Block Diagram 1 Linear Gain : 18 dB 1 Typical PAE3dB : 67.5% Operating Voltage: 50 V CW and Pulse capable Note 1: 3 GHz Load Pull Applications Military and civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Ordering info Part No. ECCN Description DC4GHz, 50 V, 200 W GaN TGF2819-FS 3A001.b.3.a RF Transistor TGF2819- EAR99 3.1 3.5 GHz EVB FSPCB4B01 TGF2819- EAR99 1.35 1.75 GHz EVB FSEVB03 Datasheet Rev. D, April 2020 Subject to change without notice - 1 of 27 - www.qorvo.com TGF2819-FS DC 4 GHz, 50 V, 200 W GaN RF Transistor 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +145 V Drain Voltage Range, VD +32 +50 +55 V Gate Voltage Range, V -7 to +2.0 V G Drain Bias Current, IDQ 250 mA Drain Current, IDMAX 12 A 4 Drain Current, I 7.2 A D Gate Current Range, IG See page 20. mA 3 Gate Voltage, VG 2.8 V 2 Power Dissipation, P 207 W DISS Channel Temperature (T ) 250 C CH 2 RF Input Power, T = 25C +39.8 dBm 2,4 Power Dissipation (PD) 184 W Channel Temperature, T 275 C CH 2 Power Dissipation (PD), CW 98 W Mounting Temperature 320 C Notes: (30Seconds) 1. Electrical performance is measured under conditions noted Storage Temperature 65 to +150 C in the electrical specifications table. Specifications are not Notes: guaranteed over all recommended operating conditions. 2. Package base at 85 C 1. Operation of this device outside the parameter ranges 3. To be adjusted to desired I given above may cause permanent damage. DQ 4. Pulsed, 100uS PW, 20% DC 2. Pulsed 100uS PW, 20% DC 1 Measured Load Pull Performance Power Tuned Typical Values Parameter Units Frequency, F 2.7 2.9 3.1 3.3 3.5 3.7 GHz Drain Voltage, VD 50 50 50 50 50 50 V Drain Bias Current, IDQ 200 200 200 200 200 200 mA Output Power at 3dB 54 53.5 53.2 53 53 52.7 dBm compression, P3dB Power Added Efficiency at 3dB 60.0 53.7 46.0 48.8 43 51.4 % compression, PAE3dB Gain at 3dB compression, G 13.9 14.3 13.3 16.5 14 15.5 dB 3dB Notes: 1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle 2. Characteristic Impedance, Zo = 7 . 1 Measured Load Pull Performance Efficiency Tuned Parameter Typical Values Units Frequency, F 2.7 2.9 3.1 3.3 3.5 3.7 GHz Drain Voltage, V 50 50 50 50 50 50 V D Drain Bias Current, I 200 200 200 200 200 200 mA DQ Output Power at 3dB 52.5 53.2 52.6 52.1 52.3 51.9 dBm compression, P3dB Power Added Efficiency at 3dB 65.5 64.3 54.4 52.2 53.7 53.9 % compression, PAE3dB Gain at 3dB compression, G 15.8 15.5 15.5 17.8 16.1 15.9 dB 3dB Notes: 1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle 2. Characteristic Impedance, Zo = 7 . Datasheet Rev. D, April 2020 Subject to change without notice - 2 of 27 - www.qorvo.com