TGF2929-FS 100W, 28V, DC 3.5 GHz, GaN RF Power Transistor Product Overview The Qorvo TGF2929-FS is a 107 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant. Evaluation boards are available upon request. Key Features Frequency: DC to 3.5 GHz 1 Output Power (P3dB) : 107 W 1 Linear Gain : 17 dB 1 Typical DEff3dB : 60.8% Operating Voltage: 28 V Functional Block Diagram Low thermal resistance package Pulse capable Note 1: 3.5 GHz Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Part No. Description TGF2929-FS DC3.5GHz RF Power Transistor TGF2929-FSEVB01 3.1 3.5 GHz Evaluation Board Datasheet Rev. B, August 17, 2018 Subject to change without - 0 of 20 - www.qorvo.com notice TGF2929-FS 100W, 28V, DC 3.5 GHz, GaN RF Power Transistor 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +145 V Drain Voltage Range, VD +12 +28 +50 V Gate Voltage Range, V -7 to +2 V G Drain Bias Current, IDQ 260 mA Drain Current 12 A 3 Peak Drain Current, I 7.2 A D Gate Current Range, IG See page 4. mA 4 Gate Voltage, VG 2.7 V Power Dissipation, 20% DC 144 W 2 Power Dissipation, CW (P ) 82 W D 500 uS PW, PDISS, T = 85C Power Dissipation, Pulsed RF Input Power, CW, T = 140 W +39.8 dBm 2, 3 (P ) D 25C Notes: Mounting Temperature 320 C 1. Electrical performance is measured under conditions noted (30Seconds) in the electrical specifications table. Specifications are not Storage Temperature 65 to +150 C guaranteed over all recommended operating conditions. Notes: 2. Package base at 85 C 3. Pulse Width = 100 uS, Duty Cycle = 20% 1. Operation of this device outside the parameter ranges 4. To be adjusted to desired IDQ given above may cause permanent damage. 1 Pulsed Characterization Load-Pull Performance Power Tuned Parameters Typical Values Unit Frequency, F 1.0 2.0 3.0 3.5 GHz Linear Gain, GLIN 21.2 16.7 15.6 15.8 dB Output Power at 3dB 100 132 120 107 W compression point, P3dB Drain Efficiency at 3dB 61.0 60.4 57.6 54.4 % compression point, DEff 3dB Gain at 3dB compression point 18.2 13.7 12.6 12.8 dB Notes: 1. Test conditions unless otherwise noted: VD = +28V, IDQ = 260mA, Temp = +25C 1 Pulsed Characterization Load-Pull Performance Efficiency Tuned Parameters Typical Values Unit Frequency, F 1.0 2.0 3.0 3.5 GHz Linear Gain, GLIN 22.3 17.2 16.9 17.0 dB Output Power at 3dB 47.8 50.1 49.8 48.9 W compression point, P 3dB Drain Efficiency at 3dB 76.6 66.9 68.3 60.8 % compression point, DEff3dB Gain at 3dB compression point, 19.3 14.2 13.9 14.0 dB G 3dB Notes: 1. Test conditions unless otherwise noted: VD = +28V, IDQ = 260mA, Temp = +25C Datasheet Rev. B, August 17, 2018 Subject to change without - 1 of 20 - www.qorvo.com notice