TGF2977-SM DC 12 GHz, 32 V, 5 W GaN RF Transistor Product Overview The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz and 32 V supply. The device is in an industry standard overmolded package and is ideally suited for avionics, military, marine and weather radar. The device can support pulsed and linear operations. Lead-free and ROHS compliant. Evaluation boards are available upon request. 3 x 3mm Package Key Features Frequency: DC to 12 GHz 1 Output Power (P ) : 4.8 W 3dB Functional Block Diagram 1 Linear Gain : 13 dB 1 Typical PAE : 50% 3dB N/C N/C N/C N/C Operating Voltage: 32 V 16 15 14 13 CW and Pulse capable Note 1: 9 GHz Load Pull N/C 1 12 N/C V , RF IN 2 G 11 V , RF OUT D Applications V , RF IN 3 G 10 V , RF OUT D Military radar N/C 4 Commercial radar 9 N/C o Avionics o Marine 5 6 7 8 o Weather N/C N/C N/C N/C Ordering info Part No. ECCN Description TGF2977-SM EAR99 QFN Packaged Part TGF2977- EAR99 9 10 GHz EVB SMEVBP01 TGF2977- EAR99 2.6 4.2 GHz EVB SMEVBP02 www.qorvo.com Datasheet Rev. B, July 25, 2017 Subject to change without notice - 1 of 28 - TGF2977-SM DC 12 GHz, 32 V, 5 W GaN RF Transistor 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +100 V Drain Voltage Range, V +32 +40 V D Gate Voltage Range, VG -7 to +2 V Drain Bias Current, IDQ 25 mA Drain Current, I 0.6 A DMAX 4 Drain Current, I 325 mA D Gate Current Range, IG See page 20. mA 3 Gate Voltage, VG 2.8 V 2 Power Dissipation, CW (P 9.3 W DISS) Channel Temperature (T ) 225 C CH RF Input Power, CW, Tamb = +30 dBm 2,4 Power Dissipation (P ) 9.2 W D 25C 2 Power Dissipation (PD), CW 7.4 W Channel Temperature, T 275 C CH Notes: Mounting Temperature 320 C 1. Electrical performance is measured under conditions noted (30Seconds) in the electrical specifications table. Specifications are not Storage Temperature 65 to +150 C guaranteed over all recommended operating conditions. Notes: 2. Package base at 85 C 3. To be adjusted to desired I DQ 1. Operation of this device outside the parameter ranges 4. Pulsed, 100uS PW, 20% DC given above may cause permanent damage. 2. Device base temperature = 85 C. 1 Measured Load Pull Performance Power Tuned Typical Values Parameter Units Frequency, F 5 6 8 9 10 12 GHz Drain Voltage, VD 32 32 32 32 32 32 V Drain Bias Current, IDQ 25 25 25 25 25 25 mA Output Power at 3dB 37.5 37.2 37.0 36.8 36.8 36.5 dBm compression, P3dB Power Added Efficiency at 3dB 52.0 56.3 51.1 45.8 41.7 31.8 % compression, PAE3dB Gain at 3dB compression, G3dB 15.2 14.4 11.4 9.8 8.3 5.3 dB Notes: 1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle 2. Characteristic Impedance, Zo = 15 . 1 Measured Load Pull Performance Efficiency Tuned Parameter Typical Values Units Frequency, F 5 6 8 9 10 12 GHz Drain Voltage, V 32 32 32 32 32 32 V D Drain Bias Current, I 25 25 25 25 25 25 mA DQ Output Power at 3dB 37.2 36.3 35.7 36.0 35.5 36.1 dBm compression, P3dB Power Added Efficiency at 3dB 60.2 62.3 56.6 52.0 47.1 38.2 % compression, PAE3dB Gain at 3dB compression, G 15.5 14.8 12.0 10.4 8.9 5.8 dB 3dB Notes: 1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle 2. Characteristic Impedance, Zo = 15 . www.qorvo.com Datasheet Rev. B, July 25, 2017 Subject to change without notice - 2 of 28 -
