ATF-53189 1 Enhancement Mode Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Single voltage operation Avago Technologiess ATF-53189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost High Linearity and Gain surface mount SOT89 package. The device is ideal as a Low Noise Figure high-linearity, low noise, medium-po wer amplifier. Its Excellent uniformity in product specifications operating frequency range is from 50 MHz to 6 GHz. SOT 89 standard package ATF-53189 is ideally suited for Cellular/PCS and WCDMA 2 wireless infrastructure, WLAN, WLL and MMDS application, Point MTTF > 300 years and general-purpose discrete E-pHEMT amplifiers that MSL-2 and lead-free require medium power and high linearity. All devices are Tape-and-Reel packaging option available 100% RF and DC tested. Specifications Pin Connections and Package Marking 2 GHz, 4.0V, 135 mA (Typ.) 40.0 dBm Output IP3 23.0 dBm Output Power at 1dB gain compression 3GX 0.85 dB Noise Figure 15.5 dB Gain 46% PAE at P1dB 1 2 3 3 2 1 3 RFin GND RFout RFout GND RFin LFOM 12.7 dB Applications Top View Bottom View Front-end LNA Q1 and Q2, Driver or Pre-driver Ampli- Notes: fier for Cellular/PCS and WCDMA wireless infrastruc - Package marking provides orientation and identification: ture 3G = Device Code x = Month code indicates the month of manufacture. Driver Amplifier for WLAN, WLL/RLL and MMDS ap - D = Drain plications S = Source General purpose discrete E-pHEMT for other high G = Gate linearity applications Notes: 1. Enhancement mode technology employs a single positive V , gs eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power. 1 ATF-53189 Absolute Maximum Ratings 2,4 Thermal Resistance Absolute = 70C/W ch-b Symbol Parameter Units Maximum 2 V DrainSource Voltage V 7 ds Notes: 2 1. Operation of this device above any one of V G ate S ource Voltage V -5 to 1.0 gs these parameters may cause permanent 2 V Gate Drain Voltage V -5 to 1.0 damage. gd 2. Assuming DC quiescent conditions. 2 I Drain Current mA 300 ds 3. Board (package belly) temperature T is B 25C. Derate 14.30 mW/C for T > 80C. I Gate Current mA 20 B gs 4. Channel-to-board thermal resistance 3 P Total Power Dissipation W 1.0 measured using 150C Liquid Crystal Mea- diss surement method. P RF Input Power dBm +24 in max. T Channel Temperature C 150 ch T Storage Temperature C -65 to 150 stg ATF-53189 Electrical Specifications T = 25C, DC bias for RF parameters is Vds = 4.0V and Ids = 135 mA unless otherwise specified. A Symbol Parameters and Test Conditions Units Min. Typ. Max. Vgs Operational Gate Voltage Vds = 4.0V, Ids = 135 mA V 0.65 Vth Threshold Voltage Vds = 4.0V, Ids = 8 mA V 0.30 Ids Drain to Source Current Vds = 4.0V, Vgs = 0V A 3.70 Gm Transconductance Vds = 4.0V, Gm = Ids/Vgs mmho 650 Vgs = Vgs1 Vgs2 Vgs1 = 0.6V, Vgs2 = 0.55V Igss Gate Leakage Current Vds = 0V, Vgs = -4V A -10.0 -0.34 NF Noise Figure f=900 MHz dB 0.80 f=2.0 GHz dB 0.85 1.3 f=2.4 GHz dB 1.00 1 G Gain f=900 MHz dB 17.2 f=2.0 GHz dB 14.0 15.5 17.0 f=2.4 GHz dB 15.0 1 OIP3 Output 3rd Order Intercept Point f=900 MHz dBm 42.0 f=2.0 GHz dBm 36.0 40.0 f=2.4 GHz dBm 38.6 1 P1dB Output 1dB Compressed f=900 MHz dBm 21.7 f=2.0 GHz dBm 23.0 f=2.4 GHz dBm 23.2 PAE Power Added Efficiency f=900 MHz % 33.8 f=2.0 GHz % 46.0 f=2.4 GHz % 49.0 ACLR Adjacent Channel Leakage Oset Bff W = 5 MHz dBc -54.0 1,2 Power Ratio Oset Bff W = 10 MHz dBc -64.0 Notes: 1. Measurements at 2 GHz obtained using production test board described in Figure 1. 2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -8 dBm - Channel Integrate Bandwidth = 3.84 MHz 2