Package Type: 440117 PN: CGHV14800F CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Crees CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically delivering >65% drain efficiency. The package options are ceramic/metal flange package. Typical Performance Over 1.2-1.4 GHz (T = 25C) of Demonstration Amplifier C Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 1000 940 940 920 910 W Power Gain 15.5 15.2 15.2 15.1 15.1 dB Drain Efficiency 74 73 73 69 67 % Note: Measured in the CGHV14800-AMP amplifier circuit, under 100 s pulse width, 5% duty cycle, P = 44.5 dBm. IN Features Reference design amplifier 1.2 - 1.4 GHz Operation 910 W Typical Output Power 14 dB Power Gain 70% Typical Drain Efficiency <0.3 dB Pulsed Amplitude Droop Internally input and output matched Subject to change without notice. 1 www.cree.com/rf Rev 2.0 June 2017Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V 125 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 132 mA 25C GMAX 1 Maximum DC Current I 24 A 25C DCMAX Maximum Duty Cycle D 5 % 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 CW Thermal Resistance, Junction to Case R 0.47 C/W P = 398 W, 45C JC DISS 3 Pulsed Thermal Resistance, Junction to Case R 0.16 C/W P = 664 W, 100 sec, 5%, 85C JC DISS 4 Case Operating Temperature T -40, +100 C P = 664 W, 100 sec, 5% C DISS Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at