Package Types: 440206 & 440223 PNs: CG2H40045P & CG2H40045F CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Crees CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package. FEATURES APPLICATIONS Up to 4 GHz Operation 2-Way Private Radio 18 dB Small Signal Gain at 2.0 GHz Broadband Amplifiers 14 dB Small Signal Gain at 4.0 GHz Cellular Infrastructure 55 W Typical P Test Instrumentation SAT 60 % Efficiency at P Class A, AB, Linear amplifiers suitable for SAT 28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. 1 www.cree.com/rf Rev 2.0 - September 2018Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 120 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 15 mA 25C GMAX 1 Maximum Drain Current I 6 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 80 in-oz 3 Thermal Resistance, Junction to Case R 2.8 C/W 85C JC 3,4 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CG2H40045F at P = 56W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 8. Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 14.4 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 400 mA GS(Q) DC DS D 2 Saturated Drain Current I 11.6 14.0 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 14.4 mA BR DC GS D 3 RF Characteristics (T = 25C, F = 2.5 GHz unless otherwise noted) C 0 Small Signal Gain G 15 17 dB V = 28 V, I = 400 mA SS DD DQ 4 Power Output P 47 55 W V = 28 V, I = 400 mA SAT DD DQ 5 Drain Efficiency 52 62 % V = 28 V, I = 400 mA, P = P DD DQ OUT SAT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 400 mA, DD DQ P = 45 W CW OUT Dynamic Characteristics Input Capacitance C 16.6 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 6.3 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.6 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CG2H40045F-AMP 4 P is defined as I = 1.08 mA. SAT G 5 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CG2H40045 Rev 2.0