X-On Electronics has gained recognition as a prominent supplier of TGF2934 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. TGF2934 RF JFET Transistors are a product manufactured by Qorvo. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

TGF2934 Qorvo

TGF2934 electronic component of Qorvo
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Part No.TGF2934
Manufacturer: Qorvo
Category: RF JFET Transistors
Description: RF JFET Transistors DC-25GHz 14Watt NF 1.5dB GaN
Datasheet: TGF2934 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 104.3209
25 : USD 71.197
100 : USD 51.611
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Packaging
Application
Configuration
Series
Brand
Forward Transconductance - Min
Nf - Noise Figure
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGF2934 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGF2934 and other electronic components in the RF JFET Transistors category and beyond.

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TGF2934 DC 25 GHz, 28 V, 14 W GaN RF Transistor Product Overview The Qorvo TGF2934 is a 14 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvos proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant 1.457 x0.551x0.100mm Key Features Frequency: DC to 25 GHz 1 Output Power (P ) : 14 W 3dB Functional Block Diagram 1 Linear Gain : 14 dB 1 Typical PAE : 49% 3dB 2 1 Typical Noise Figure : 1.5 dB Operating Voltage: 28 V CW and Pulse capable Non-linear & Noise Models available Note 1: 10 GHz 1 Applications Defense and Aerospace Broadband wireless Low noise amplifier 3, GND Ordering info Part No. ECCN Description DC25GHz, 28 V, 3.5 W GaN RF TGF2934 3A001b.3.b Transistor Datasheet Rev. A, August 09, 2016 Subject to change without notice - 1 of 24 - www.qorvo.com TGF2934 DC 25 GHz, 28 V, 14 W GaN RF Transistor 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +60 V Drain Voltage Range, V +12 +20 +29.5 V D Gate Voltage Range, VG -7 to +1.5 V Drain Bias Current, IDQ 80 160 320 mA Drain Current, I 4 A DMAX Drain Current, I 1000 mA D Gate Current Range, IG See page 20. mA 3 Gate Voltage, VG 2.8 V 2 Power Dissipation, CW, P 17.4 W DISS Channel Temperature (TCH) 250 C RF Input Power, CW, 10 GHz, +33 dBm 2 Power Dissipation, CW (P ) 15.8 W D T = 25C Channel Temperature, T 275 C Notes: CH 1. Electrical performance is measured under conditions noted Mounting Temperature in the electrical specifications table. Specifications are not 320 C (30Seconds) guaranteed over all recommended operating conditions. Storage Temperature 65 to +150 C 2. Package base at 85 C 3. To be adjusted to desired IDQ Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. 2. Base temperature at 85 C Datasheet Rev. A, August 09, 2016 Subject to change without notice - 2 of 24 - www.qorvo.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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