T1G2028536-FS 285W, 36V DC 2 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics Product Features Functional Block Diagram Frequency: DC to 2.0 GHz Output Power (P ): 260 W at 1.2 GHz 3dB Linear Gain: 18 dB at 1.2 GHz Operating Voltage: 36 V Low thermal resistance package General Description Pin Configuration The TriQuint T1G2028536-FS is a 285 W (P ) discrete 3dB Pin No. Label GaN on SiC HEMT which operates from DC to 2 GHz. 1 V / RF OUT D The device is constructed with TriQuints proven 2 V / RF IN G TQGaN25HV process, which features advanced field Flange Source plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Part ECCN Description Packaged part T1G2028536-FS EAR99 Flangeless T1G2028536-FS- 1.2 1.4 GHz EAR99 EVB1 Evaluation Board Datasheet: Rev A 10-17-13 Disclaimer: Subject to change without notice - 1 of 13 - 2013 TriQuint www.triquint.com T1G2028536-FS 285W, 36V DC 2 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Breakdown Voltage (BV ) 145 V (Min.) Drain Voltage (V ) 36 V (Typ.) DG D Drain Gate Voltage (V ) 48 V Drain Quiescent Current (I ) 576 mA (Typ.) DQ DG Gate Voltage Range (V ) -7 to 0 V Peak Drain Current ( I ) 13.3 A (Typ.) G D Drain Current (I ) 24 A Gate Voltage (V ) -3.0 V (Typ.) D G Gate Current (I ) -57 to 67 mA Channel Temperature (T ) 250 C (Max) G CH Power Dissipation (P ) 260 W Power Dissipation, CW (P ) 226 W D D Power Dissipation, Pulse (P ) 288 W RF Input Power, CW, D 47 dBm T = 25C (P ) Electrical specifications are measured at specified test conditions. IN Specifications are not guaranteed over all recommended Channel Temperature (T ) 275 C CH operating conditions. Mounting Temperature 320 C (30 Seconds) Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. (1) RF Characterization Load Pull Performance at 1.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 36 V, I = 576 mA A D DQ Symbol Parameter Min Typical Max Units G Linear Gain 20.8 dB LIN P Output Power at 3 dB Gain Compression 316.0 W 3dB DE Drain Efficiency at 3 dB Gain Compression 66.7 % 3dB Power-Added Efficiency at 3 dB Gain PAE 65.6 % 3dB Compression G Gain at 3 dB Compression 17.8 dB 3dB Notes: 1. V = 36 V, I = 576 mA Pulse: 300s, 10% DS DQ (1) RF Characterization Load Pull Performance at 2.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 36 V, I = 576 mA A D DQ Symbol Parameter Min Typical Max Units G Linear Gain 19.4 dB LIN P Output Power at 3 dB Gain Compression 268.9 W 3dB DE Drain Efficiency at 3 dB Gain Compression 56.3 % 3dB Power-Added Efficiency at 3 dB Gain PAE 55.1 % 3dB Compression G Gain at 3 dB Compression 16.4 dB 3dB Notes: 1. V = 36 V, I = 576 mA Pulse: 300s, 10% DS DQ Datasheet: Rev A 10-17-13 Disclaimer: Subject to change without notice - 2 of 13 - 2013 TriQuint www.triquint.com