QPD1008 125W, 50V, DC 3.2 GHz, GaN RF Transistor General Description The QPD1008 is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz with a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited for military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operation. Lead-free and ROHS compliant Product Features Evaluation boards are available upon request. Frequency: DC to 3.2 GHz 1 Output Power (P3dB) : 162 W 1 Linear Gain : 17.5 dB 1 Typical DEFF3dB : 74% Operating Voltage: 50 V Low thermal resistance package Functional Block Diagram CW and Pulse capable Note: 1 2 GHz Applications Military radar Civilian radar Land mobile and military radio communications Test instrumenation Wideband or narrowband amplifiers Jammers Avionics Part No. Description QPD1008 DC3.2GHz RF Transistor QPD1008PCB4B01 0.96 1.215 GHz EVB QPD1008EVB2 1.1 1.5 GHz EVB Data Sheet Rev. E, May 2020 Subject to change without notice 1 of 23 www.qorvo.com QPD1008 125W, 50V, DC 3.2 GHz, GaN RF Transistor 1 Absolute Maximum Ratings Parameter Rating Units Breakdown Voltage, BVD +145 V Gate Voltage Range, V -7 to +2 V G Drain Current, IDMAX 20.4 A Gate Current Range, IG See page 4. mA Power Dissipation, CW, P , Base Temperature = 85 C 79 W DISS RF Input Power, CW, 50, T = 25C +40 dBm Mounting Temperature (30Seconds) 320 C Storage Temperature 40 to +150 C Notes: 1 Operation of this device outside the parameter ranges given above may cause permanent damage. 1 Recommended Operating Conditions Parameter Min Typ Max Units Operating Temperature Range 40 +25 +85 C Drain Voltage Range, V +12 +50 +55 V D 3 Drain Current, ID 4.0 A Drain Bias Current, I 260 mA DQ 4 Gate Voltage, V 2.8 V G 2 Power Dissipation, CW (PD) 71 W 2, 3 Power Dissipation, Pulsed (P ) 127 W D Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package at 85 C 3. Drain current at P3dB, Pulse Width = 128 uS, Duty Cycle = 10% 4. To be adjusted for desired I DQ Electrical Characterization Symbol Parameter Min Typical Max Units Gate VD = +10 V, VG = 3.8 V 23.1 mA Leakage Data Sheet Rev. E, May 2020 Subject to change without notice 2 of 23 www.qorvo.com