X-On Electronics has gained recognition as a prominent supplier of QPD1011SR RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. QPD1011SR RF JFET Transistors are a product manufactured by Qorvo. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

QPD1011SR Qorvo

QPD1011SR electronic component of Qorvo
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Part No.QPD1011SR
Manufacturer: Qorvo
Category: RF JFET Transistors
Description: RF JFET Transistors .03-1.2GHz 7W 50V GaN
Datasheet: QPD1011SR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 46.9724 ea
Line Total: USD 4697.24 
Availability - 0
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 100
Multiples : 100
100 : USD 46.9724

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Series
Brand
Forward Transconductance - Min
Development Kit
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We are delighted to provide the QPD1011SR from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPD1011SR and other electronic components in the RF JFET Transistors category and beyond.

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QPD1011 30 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1011 is a 7W (P ), 50-input matched 3dB discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios. Lead-free and ROHS compliant. 5 x 6 x 0.85 mm Package Evaluation boards are available upon request. Key Features Frequency: 30 to 1200 MHz 1 Output Power (P ) : 8.7 W 3dB Functional Block Diagram 1 Linear Gain : 21 dB 1 Typical PAE3dB : 60 % Operating Voltage: 50 V CW and Pulse capable 1 8 Note 1: 1 GHz Load Pull 2 7 Input Matching Applications NW 6 3 Military radar Civilian radar 5 4 Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Ordering info Part No. Description QPD1011EVB01 30 1000 MHz EVB QPD1011S2 Pack of 2 QPD1011 QPD1011SQ Pack of 25 QPD1011 QPD1011SR Pack of 100 QPD1011 Datasheet Rev. C, January 15, 2019 Subject to change without notice - 1 of 24 - www.qorvo.com QPD1011 30 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +145 V Drain Voltage Range, VD +32 +50 +55 V Gate Voltage Range, V -7 to +2 V G Drain Bias Current, IDQ 20 mA Drain Current, IDMAX 1.46 A 4 Drain Current, I 300 mA D Gate Current Range, IG See page 17. mA 3 Gate Voltage, VG 2.8 V 2 Power Dissipation, P 14.7 W DISS 2,4 Power Dissipation (P ) 13 W D RF Input Power, Pulsed, 1.3 +27 dBm 2 2 Power Dissipation (PD), CW 10 W GHz, T = 25C Notes: Mounting Temperature 320 C 1. Electrical performance is measured under conditions noted (30Seconds) in the electrical specifications table. Specifications are not Storage Temperature 65 to +150 C guaranteed over all recommended operating conditions. 2. Package base at 85 C Notes: 3. To be adjusted to desired IDQ 1. Operation of this device outside the parameter ranges 4. Pulsed, 100 uS PW, 10% DC given above may cause permanent damage. 2. Pulsed, 100 uS PW, 10% DC 1, 2 Measured Load Pull Performance Power Tuned Typical Values Parameter Units Frequency, F 0.6 0.8 1.0 1.2 GHz Drain Voltage, VD 50 50 50 50 V Drain Bias Current, IDQ 20 20 20 20 mA Output Power at 3dB 39.7 39.4 39.4 39.1 dBm compression, P3dB Power Added Efficiency at 3dB 59.4 58.7 49.3 49.1 % compression, PAE3dB Gain at 3dB compression, G 15.7 18 18.3 16.6 dB 3dB Notes: 1. Pulsed, 100 uS Pulse Width, 10% Duty Cycle 2. Characteristic Impedance Zo = 33.4 . 1, 2 Measured Load Pull Performance Efficiency Tuned Parameter Typical Values Units Frequency, F 0.6 0.8 1.0 1.2 GHz Drain Voltage, V 50 50 50 50 V D Drain Bias Current, I 20 20 20 20 mA DQ Output Power at 3dB 37.7 38.4 37.3 37.4 dBm compression, P3dB Power Added Efficiency at 3dB 71.6 64.1 60.1 55.4 % compression, PAE3dB Gain at 3dB compression, G 17.9 19.2 19.5 19.1 dB 3dB Notes: 1. Pulsed, 100 uS Pulse Width, 10% Duty Cycle 2. Characteristic Impedance Zo = 33.4 . Datasheet Rev. C, January 15, 2019 Subject to change without notice - 2 of 24 - www.qorvo.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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