X-On Electronics has gained recognition as a prominent supplier of QPD1016 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. QPD1016 RF JFET Transistors are a product manufactured by Qorvo. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

QPD1016 Qorvo

QPD1016 electronic component of Qorvo
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Part No.QPD1016
Manufacturer: Qorvo
Category: RF JFET Transistors
Description: RF JFET Transistors 500W 50V 1.2-1.4 GHz GaN Transistor
Datasheet: QPD1016 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1161.0109 ea
Line Total: USD 1161.01 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1161.0109
25 : USD 887.4048

   
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We are delighted to provide the QPD1016 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPD1016 and other electronic components in the RF JFET Transistors category and beyond.

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QPD1016 DC 1.7 GHz, 50 V, 500 W GaN RF Transistor Product Overview The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations. ROHS compliant. Evaluation boards are available upon request. NI-780 Package Key Features Frequency: DC to 1.7 GHz 1 Output Power (P ) : 680 W 3dB Functional Block Diagram 1 Linear Gain : 23.9 dB 1 Typical PAE3dB : 77.4% Operating Voltage: 50 V CW and Pulse capable Note 1: 1.3 GHz Load Pull Applications IFF Avionics Military and civilian radar Test instrumentation Part No. Description DC1.7GHz, 50 V, 500 W GaN RF QPD1016 Transistor QPD1016EVB01 1.2 1.4 GHz EVB Datasheet Rev. B, August 17, 2018 Subject to change without notice - 0 of 24 - www.qorvo.com QPD1016 DC 1.7 GHz, 50 V, 500 W GaN RF Transistor 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +145 V Drain Voltage Range, VD +32 +50 +55 V Gate Voltage Range, V -7 to +1.5 V G Drain Bias Current, IDQ 1000 mA Drain Current, IDMAX 70 A 4 Drain Current, I 16 A D Gate Current Range, IG See page 17. mA 3 Gate Voltage, VG 2.8 V 2 Power Dissipation, P 714 W DISS 2,4 Power Dissipation (P ) 441 W D RF Input Power, Pulse, 1.3 +45.5 dBm 2 2 Power Dissipation (PD), CW 269 W GHz, T = 25C Notes: Mounting Temperature 320 C 1. Electrical performance is measured under conditions noted (30Seconds) in the electrical specifications table. Specifications are not Storage Temperature 65 to +150 C guaranteed over all recommended operating conditions. 2. Package base at 85 C Notes: 3. To be adjusted to desired IDQ 1. Operation of this device outside the parameter ranges 4. Pulsed, 300uS PW, 10% DC given above may cause permanent damage. 2. Pulsed 300uS PW, 10% DC 1 Measured Load Pull Performance Power Tuned Typical Values Parameter Units Frequency, F 1.1 1.2 1.3 1.4 1.5 1.7 GHz Drain Voltage, VD 50 50 50 50 50 50 V Drain Bias Current, IDQ 1000 1000 1000 1000 1000 1000 mA Output Power at 3dB 58.8 58.6 58.3 58 57.6 58 dBm compression, P3dB Power Added Efficiency at 3dB 71.7 69.2 72.2 76.1 69.9 71.2 % compression, PAE3dB Gain at 3dB compression, G 21 20.6 20.9 21.7 21.0 20.6 dB 3dB Notes: 1. Pulsed, 300 uS Pulse Width, 10% Duty Cycle 2. Characteristic Impedance, Zo = 3 . 1 Measured Load Pull Performance Efficiency Tuned Parameter Typical Values Units Frequency, F 1.1 1.2 1.3 1.4 1.5 1.7 GHz Drain Voltage, V 50 50 50 50 50 50 V D Drain Bias Current, I 1000 1000 1000 1000 1000 1000 mA DQ Output Power at 3dB 57.6 57.1 56.4 57.3 56.1 56.7 dBm compression, P3dB Power Added Efficiency at 3dB 79.2 78.3 77.4 77.8 71.2 73.5 % compression, PAE3dB Gain at 3dB compression, G 22.2 22.1 22.2 22.3 21.7 21.7 dB 3dB Notes: 1. Pulsed, 300 uS Pulse Width, 10% Duty Cycle 2. Characteristic Impedance, Zo = 3 . Datasheet Rev. B, August 17, 2018 Subject to change without notice - 1 of 24 - www.qorvo.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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