QPD1022 10W, 32V, DC 12 GHz, GaN RF Transistor General Description The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. 16 Pin QFN (3 x3x0.85mm) 1 Lead-free and ROHS compliant Product Features Frequency: DC to 12 GHz Evaluation boards are available upon request. 1 Output Power (P3dB): 11 W 1 Linear Gain: 24.0 dB 1 Typical PAE3dB: 68.8 % Operating Voltage: 32 V Low thermal resistance package Functional Block Diagram CW and Pulse capable 3 x 3 mm package Note 1: 2 GHz (Loadpull) Applications Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Ordering Information Part No. Description QPD1022S2 2 Piece Sample Bag QPD1022SQ 25 Piece Sample Bag QPD1022SR 100 Piece 7 Reel QPD1022EVB01 3.1 3.5 GHz EVB Datasheet Rev. C, Aug 24, 2018 - 1 of 22 - Disclaimer: Subject to change without notice 2018 Qorvo www.qorvo.com QPD1022 10W, 32V, DC 12 GHz, GaN RF Transistor 1, 2 Absolute Maximum Ratings Parameter Rating Units Breakdown Voltage,BVDG 100 V Gate Voltage Range, V -7 +2 V G Drain Current, ID 2.4 A 1 Gate Current Range, IG 0.9 mA Power Dissipation, CW, P 17.5 W DISS RF Input Power at 3.3 GHz, CW, 50, T = 25C +29 dBm Mounting Temperature (30Seconds) 320 C Storage Temperature 65 to +150 C Notes: 1. At Channel temperature of 160C. 2. Operation of this device outside the parameter ranges given above may cause permanent damage. 1, 2, 3, 4 Recommended Operating Conditions Parameter Min Typ Max Units Operating Temp. Range 40 +25 +85 C Drain Voltage Range, VD +12 +32 +40 V Drain Bias Current, I 50 mA DQ Drain Current, ID 610 mA 4 Gate Voltage, V 2.8 V G 2 Power Dissipation, CW (PD) 13.8 W 2, 3 Power Dissipation, Pulsed (PD) 18.0 W Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Back plane of package at 85 C 3. Pulse Width = 100 us, Duty Cycle = 20% 4. To be adjusted to desired IDQ Datasheet Rev. C, Aug 24, 2018 - 2 of 22 - Disclaimer: Subject to change without notice 2018 Qorvo www.qorvo.com