QPD2796 EVB Qorvo

QPD2796 200 W, 48 V 2.5-2.7GHz GaN RF Power Transistor Applications W-CDMA / LTE Macrocell Base Station Active Antenna General Purpose Applications 2 Lead NI400 Package Product Features Functional Block Diagram Operating Frequency Range: 2.5 2.7 GHz Operating Drain Voltage: 48 V Maximum Output Power (PSAT): 200 W Maximum Drain Efficiency: 72% Efficiency-Tuned P3dB Gain: 20 dB 2-lead, earless, ceramic flange NI400 package General Description Pin Configuration The QPD2796 is a discrete GaN on SiC HEMT which Pin No. Label operates from 2.52.7 GHz. The device is a single stage 1 RF IN, VG matched power amplifier transistor. 2 RF OUT, VD Backside Paddle RF/DC Ground The QPD2796 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. QPD2796 can deliver PSAT of 200 W at 48 V operation. Lead-free and ROHS compliant. Ordering Information Part No. ECCN Description 200 W, 2.5-2.7 GHz, GaN QPD2796 EAR99 RF Power Transistor Preliminary Datasheet: Rev 03-22-16 - 1 of 7 - Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com QPD2796 200 W, 48 V 2.5-2.7GHz GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Gate Voltage (V ) 10 V Operating Temperature 40 C G Drain Voltage (V ) +55 V Gate Voltage (V ) 2.7 V D G Drain Voltage (V ) 48 V Peak RF Input Power 40 dBm D VSWR Mismatch, P1dB Pulse (20% Quiescent Current (ICQ) 360 mA 10:1 duty cycle, 100 width), T = 25C 6 T for >10 hours MTTF 225 C CH Storage Temperature 65 to +150C Electrical performance is measured under conditions noted in Operation of this device outside the parameter ranges the electrical specifications table. Specifications are not given above may cause permanent damage. guaranteed over all recommended operating conditions. RF Characterization Power-Tuned Load Pull Performance Test conditions unless otherwise noted: VD = 48 V, IDQ = 360 mA, T = 25C, Pulsed (10% duty cycle, 100 s width) Frequency Source Load Gain P3dB P3dB Drain Efficiency (MHz) Impedance Impedance (dB) (dBm) (%) 2500 4.19 j7.30 15.21 + j3.95 18.07 52.99 57.79 2600 7.50 j10.00 13.14 + j3.66 18.30 53.08 60.41 2700 8.00 j8.00 10.89 + j5.55 18.62 52.93 60.78 RF Characterization Efficiency-Tuned Load Pull Performance Test conditions unless otherwise noted: V = 48 V, I = 360 mA, T = 25C, Pulsed (10% duty cycle, 100 s width) D DQ Frequency Source Load Gain P3dB P3dB Drain Efficiency (MHz) Impedance Impedance (dB) (dBm) (%) 2500 4.19 j7.30 12.03 j9.90 19.92 51.45 72.09 2600 7.50 j10.00 12.39 j11.45 20.27 50.49 72.77 2700 8.00 j8.00 14.88 j2.48 19.96 51.67 71.66 Preliminary Datasheet: Rev 03-22-16 - 2 of 7 - Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com