TGA2222 3238 GHz 10 Watt GaN Amplifier Product Overview Qorvos TGA2222 is a wide band power amplifier MMIC fabricated on Qorvos production 0.15 um GaN on SiC process (QGaN15). Covering 3238 GHz, the TGA2222 provides 40 dBm (10 W) of saturated output power and 16 dB of large-signal gain while achieving > 22% power-added efficiency. The TGA2222 employs a balanced architecture to minimize performance sensitivity to load variation. Its RF ports are DC coupled to ground for optimum ESD performance. The TGA2222 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. Key Features The TGA2222 can support a wide range of operating Frequency Range: 3238 GHz conditions, including CW operation, making it well-suited for P (P =24 dBm): > 40 dBm SAT IN both commercial and military systems. PAE (P =24 dBm): > 22 % IN Power Gain (PIN=24 dBm): > 16 dB Lead-free and RoHS compliant. Small Signal Gain: > 25 dB Bias (pulsed): VD = 26 V, IDQ = 640 mA Bias (CW): V = 24 V, I = 640 mA D DQ Die Dimensions: 3.43 x 2.65 x 0.05 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Communications Radar Satcom 2 3 4 5 6 EW Space communications Point to point communications 1 7 RF IN RF OUT Ordering Information 12 11 10 9 8 Part No. Description 32 38 GHz 10 W GaN Amplifier TGA2222 (10 Pcs.) TGA2222EVB1 Evaluation Board for TGA2222 Data Sheet Rev. D, February 2021 Subject to change without notice 1 of 21 www.qorvo.com TGA2222 32 38 GHz 10 Watt GaN Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 29.5 V Drain Voltage (VD, Pulsed) 26 V Gate Voltage Range (VG) -4 V to 0 V Drain Voltage (VD, CW) 24 V Drain Current (ID1/ID2/ID3) (T=85 C) 1.06/1.70/3.44 A Drain Current (IDQ) 640 mA Gate Current (I ) See plot pg. 15 Operating Temperature 40 to +85 C G Power Dissipation (PDISS), 85 C 60 W Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Input Power (PIN), 50 , CW, 30 dBm recommended operating conditions. V =24 V, I =640 mA, 85 C D DQ Input Power (P ), 3:1 VSWR, CW, IN 30 dBm VD=26 V, IDQ=640 mA, 85 C Soldering Temperature (30 seconds, 320 C maximum) Storage Temperature -55 to +125 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Data Sheet Rev. D, February 2021 Subject to change without notice 2 of 21 www.qorvo.com