TGA2307-SM 4.5-6.5 GHz 50 Watt GaN Power Amplifier General Description Qorvos TGA2307-SM is a packaged power amplifier fabricated on Qorvos production 0.25 um GaN on SiC process. Operating from 4.5-6.5 GHz, the TGA2307-SM produces greater than 47 dBm of saturated output power with a power-added efficiency greater than 44% and a large signal gain greater than 20 dB. The TGA2307-SM is offered in a 6 x 6 mm plastic overmold QFN to support low cost board assembly techniques. In addition, the package uses a copper alloy base that offers superior thermal management. With both RF ports fully matched to 50 ohms with integrated DC blocking capacitors, the TGA2307 is ideally suited to Product Features support both commercial and military applications. Frequency Range: 4.5 to 6.5 GHz Lead-free and RoHS compliant. Output Power (PIN = 27 dBm): > 47 dBm Power Added Efficiency (PIN = 27 dBm): > 44.4 % Small Signal Gain: > 26 dB Input Return Loss: > 17 dB Large Signal Gain (PIN = 27 dBm): > 20 dB Bias Condition: VD = 28 V, IDQ = 500 mA Functional Block Diagram Pulsed Operation Plastic Overmold QFN Package Package Dimensions: 6.00 x 6.00 x 0.85 mm 1 30 2 29 3 28 4 27 Applications 5 26 RF 6 25 RF INPUT OUTPUT C-Band Radar 7 24 Satellite Communication 8 23 9 22 10 21 Ordering Information Part Description TGA2307-SM 4.56.5 GHz 50 W GaN Power Amplifier TGA2307-SM EVB Evaluation Board Data Sheet Rev. A, July 2019 Subject to change without notice 1 of 16 www.qorvo.com 11 40 12 39 13 38 14 37 15 36 16 35 17 34 18 33 19 32 20 31 TGA2307-SM 4.5-6.5 GHz 50 Watt GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 40 V Drain Voltage (VD) 28 V Drain Current (ID) 7.5 A Drain Current, quiescent (IDQ) 1000 mA Gate Voltage range (VG) -5 to 0 V Operating Temperature -40 to 85 C Gate Current (ID) See plot pg. 3 Electrical specifications are measured at specified test 1 34 dBm Input PIN, Pulsed , 50 , 85 C conditions. Specifications are not guaranteed over all operating 1 conditions. Input P , Pulsed , 3:1 VSWR, 85 C 34 dBm IN Mounting Temperature (30 s max) 260 C Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Note: 1. Pulse conditions: PW = 100 us, Duty Cycle = 1% Electrical Specifications Test conditions unless otherwise noted: 25 C, I = 500 mA, Pulse Conditions PW = 100 us, Duty Cycle = 1 % DQ Parameter Min Typical Max Units Operational Frequency Range 4.5 6.5 GHz Small Signal Gain > 26 dB Input Return Loss > 17 dB Output Return Loss > 8.5 dB Output Power (P = 27 dBm) > 47 dBm IN Large Signal Gain (P = 27 dBm) > 20 dB IN Power Added Efficiency (P = 27 dBm) > 44.4 % IN nd 2 Harmonic Level (POUT = 45 dBm , Freq. = 5.5 GHz) < -47 dBc Sm. Sig. Gain Temp. Coeff. -0.042 dB/ C Output Power Temp. Coeff. -0.007 dB/ C Data Sheet Rev. A, July 2019 Subject to change without notice 2 of 16 www.qorvo.com