TGA2578 2-6 GHz 30 W GaN Power Amplifier General Description Qorvos TGA2578 is a wideband power amplifier fabricated on Qorvos 0.25 um GaN on SiC process. Operating from 2 to 6 GHz, it achieves 30 W saturated output power with high efficiency of 40% PAE, and 27 dB small signal gain. Fully matched to 50 ohms with integrated DC blocking caps on both I/O ports, the TGA2578 is ideally suited to support both commercial and defense related applications. The TGA2578 is 100% DC and RF tested on-wafer to ensure compliance to power and PAE specifications. Functional Block Diagram Product Features Frequency Range: 26 GHz 2 3 4 5 Psat: 45 dBm CW PAE: 40% CW Small Signal Gain: 27 dB Input Return Loss: >20 dB IM3: -30 dBc 40 dBm P /Tone OUT 1 6 Bias: V = 28 V, I = 400 mA, V = -2.8 V Typical D DQ G Chip Dimensions: 6.4 x 5.0 x 0.10 mm 10 9 8 7 Ordering Information Applications Communications Part Description Electronic Warfare TGA2578 TGA2578 Amplifier, Gel Pack, Qty 10 Test Instrumentation TGA2578EVB0317 TGA2578 Evaluation Board, Qty 1 EMC Amplifier Data Sheet Rev C, May 2021 Subject to change without notice 1 of 12 www.qorvo.com TGA2578 2-6 GHz 30 W GaN Power Amplifier Recommended Operating Conditions Absolute Maximum Ratings Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 28 V Drain Voltage (VD) 40 V Gate Voltage Range (V ) -8 to 0 V Drain Current (IDQ) 400 mA G Drain Current (I ) 5 A Drain Current Under RF Drive (ID DRIVE) 3800 mA D Gate Current (I ) -15 to 30 mA Gate Voltage (VG) -2.8 V G Power Dissipation, 85 C (P ) 92.5 W DISS Electrical specifications are measured at specified test Input Power, CW, 50 , (P ) 27 dBm conditions. Specifications are not guaranteed over all operating IN conditions. Input Power, CW, VSWR 3:1, VD = 30 V, 27 dBm 85 C, (P ) IN Input Power, CW, VSWR 10:1, V = 28 V, D 25 dBm 85 C (P ) IN Channel temperature (T ) 275 C CH Mounting Temperature (30 Seconds) 320 C Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 C , VD = 28 V, ID = 400 mA, VG = -2.8 V Typical Data de-embedded feeding line losses, data include bond wire effects. Parameter Min Typical Max Units Operational Frequency Range 2 6 GHz Small Signal Gain 27 dB Input Return Loss 20 dB Output Return Loss 5 dB Output Power PIN = 23 dBm 45 dBm Power Added Efficiency Pin = 23 dBm 40 % IM3 POUT/Tone = 40 dBm -30 dBc IM5 POUT/Tone = 40 dBm -40 dBc Small Signal Gain Temperature Coefficient -0.05 dB/C Output Power Temperature Coefficient -0.02 dBm/C Data Sheet Rev C, May 2021 Subject to change without notice 2 of 12 www.qorvo.com