TGA2595-CP 27.531GHz 8W GaN Power Amplifier Product Description Qorvos TGA2595-CP is a balanced Ka-Band power amplifier fabricated on Qorvos QGaN15 0.15um GaN on SiC process. The balanced configuration supports low return loss and improves robustness into non-ideal loads. Operating from 27.5 to 31GHz, the TGA2595-CP achieves 39dBm saturated output power with power-added efficiency of > 22% and power gain of 21dB. The TGA2595-CP is packaged in a 10-lead 15x15mm Product Features bolt-down package with a Cu base for superior thermal management. To simply system integration, the TGA2595- Frequency Range: 27.531GHz CP is fully matched to 50ohms with integrated DC blocking P : 39dBm (P = 18dBm) capacitors on both I/O ports. OUT IN PAE: > 22% (PIN = 18dBm) The TGA2595-CP is ideally suited for both commercial and Power Gain: 21dB (P = 18dBm) IN defense satellite communications. IM3 30dBm/Tone = 27dBc Lead free and RoHS compliant. IM5 30dBm/Tone = 46dBc Bias: VD = +20V, IDQ = 560mA, VG = 2.5V typical Package Dimensions: 15.2 x 15.2 x 5.2mm Package base is pure Cu offering superior thermal management Functional Block Diagram Applications Satellite Communications 1 10 2 9 3 8 4 7 5 6 Ordering Information Part No. Description TGA2595-CP 27.531GHz 8W GaN Power Amplifier 1095829 TGA2595-CP Evaluation Board - 1 of 14 - Data Sheet Rev. D February 27, 2019 www.qorvo.com TGA2595-CP 27.531GHz 8W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Min Typ. Max Units Drain Voltage (V ) 29.5V D Drain Voltage (V ) +20 V D Gate Voltage Range (VG) 5 to 0V Drain Current, (I ) 560 mA DQ Drain Current (I ) 2.8A D Drain Current, RF (I ) See chart page 5 mA D Drive Gate Current (I ) See plot at page 10 G Gate Voltage Range (V ) 2 to -2.9 V G Power Dissipation (PDISS), 85C 48W Gate Current, RF (I ) See chart page 5 mA G Drive Input Power, CW, 50, (P ) 30dBm IN T Range 40 +85 C BASE Input Power, CW, VSWR 6:1, Electrical specifications are measured at specified test 25dBm V = +22V, 85C, (P ) D IN conditions. Specifications are not guaranteed over all recommended operating conditions. Channel Temperature (TCH) 275C Soldering Temperature 260C (30 Seconds) Storage Temperature 55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 27.5 31 GHz Small Signal Gain > 25 dB Input Return Loss > 12 dB Output Return Loss > 13 dB Output Power (at P = 18dBm) 39 dBm IN Power Added Efficiency (at PIN = 18dBm) > 22 % Power Gain (at P = 18dBm) 21 dB IN IM3 30dBm/Tone 27 dBc IM5 30dBm/Tone 46 dBc Output Power Temperature Coefficient 0.01 dBm/C (25C to 85C only) Recommended Operating Voltage 20 22 V Test conditions unless otherwise noted: 25C, VD = +20V, IDQ = 560mA, VG = 2.5V typical. - 2 of 14 - Data Sheet Rev. D February 27, 2019 www.qorvo.com