TGA2625-CP 1011GHz 20W GaN Power Amplifier Product Description Qorvos TGA2625-CP is a packaged high-power X-Band amplifier fabricated on Qorvos QGaN25 0.25 um GaN on SiC process. Operating from 10 to 11 GHz, the TGA2625- CP achieves 42.5 dBm saturated output power, a power- added efficiency of > 40 %, and power gain of 28 dB. TGA2625-CP The TGA2625-CP is packaged in a 10-lead 15x15 mm bolt- down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under CW and pulsed conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. Product Features The TGA2625-CP is ideally suited for both commercial and Frequency Range: 10 11 GHz defense applications. Pout: 42.5 dBm (at PIN = 15 dBm) PAE: > 40 % Lead free and RoHS compliant. Power Gain: 28 dB (at P = 15 dBm) IN Bias: V = 28 V, I = 365 mA, V = -2.6 V typical, D DQ G Evaluation Boards are available upon request. pulsed (PW = 100 s, DC = 10 %) Package Dimensions: 15.2 x 15.2 x 3.5 mm Package base is pure Cu offering superior thermal management Functional Block Diagram Applications 1 10 Radar Communications 2 9 3 8 4 7 5 6 Ordering Information Part No. Description TGA2625-CP 1011GHz 20W GaN Power Amplifier Data Sheet Rev. C, September 2018 - 1 of 16 - www.qorvo.com TGA2625-CP 1011GHz 20W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 40 V Drain Voltage (VD) pulsed: 28 V PW = 100 s, DC = 10 % Gate Voltage Range (V ) -8 to 0 V G Drain Current (I ) 3 A Drain Current (IDQ) 365 mA D (1) Gate Current (I ) -6 to 14 mA G Drain Current Under RF Drive See plots p. 6 (ID DRIVE) Power Dissipation (P ), 85 C 53 W DISS Gate Voltage (VG) 2.6 V (Typ.) Input Power, CW, 50 , (P ) 21 dBm IN Input Power, CW, VSWR 6:1, Gate Current Under RF Drive 21 dBm See plots p. 6 VD = 28 V, 85 C, (PIN) (IG DRIVE) Mounting Temperature 260 C Temperature (T ) -40 to 85 C BASE (30 Seconds) Electrical specifications are measured at specified test Storage Temperature -55 to 150 C conditions. Specifications are not guaranteed over all Operation of this device outside the parameter ranges given recommended operating conditions. above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. (1) Max rating for IG is at Channel Temperature (TCH) of 200 C. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 10 11 GHz Small Signal Gain 36 dB Input Return Loss 13.5 dB Output Return Loss 10 dB Output Power (at PIN = 15 dBm) 42.5 dBm Power Added Efficiency (at P = 15 dBm) 40 % IN Power Gain (at P = 15 dBm) 28 dB IN Output Power Temperature Coefficient Pulsed -0.003 dBm/C (25 C to 85 C only) CW -0.01 Recommended Operating Voltage 25 28 32 V Test conditions unless otherwise noted: 25 C, V = 28 V (PW = 100 s, DC = 10 %), I = 365 mA, V = -2.6 V typical. D DQ G Data Sheet Rev. C, September 2018 - 2 of 16 - www.qorvo.com