TGA2963 6 18 GHz 20 W GaN Power Amplifier Product Overview Qorvos TGA2963 is a broadband high power MMIC amplifier fabricated on Qorvos production 0.15 um GaN on SiC process (QGaN15). The TGA2963 operates from 618 GHz and provides more than 20 W saturated output power with power- added efficiency > 20% and large-signal gain > 20 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The TGA2963 is matched to 50 with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The broadband performance makes it ideally suited in support Key Features of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands. Frequency Range: 618 GHz P : > 43 dBm P = 23 dBm OUT IN The TGA2963 is 100% DC and RF tested on-wafer to ensure PAE: > 20% PIN = 23 dBm compliance to electrical specifications. Large Signal Gain: > 20 dB PIN = 23 dBm Small Signal Gain: > 26 dB Lead-free and RoHS compliant. Return Loss: > 6.5 dB Bias: V = 20 V, I = 2500 mA D DQ Chip Dimensions: 5.4 x 6.85 x 0.10 mm Functional Block Diagram 2 3 4 5 6 Applications 1 7 Test Instrumentation Electronic Warfare (EW) Radar Communications 12 11 10 9 8 Ordering Information Part No. Description TGA2963 618 GHz 20 W GaN Power Amplifier TGA2963 EVB Evaluation Board Data Sheet Rev. C, July 2019 Subject to change without notice 2 of 17 www.qorvo.com TGA2963 6 18 GHz 20 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value/Range Drain Voltage (V ) 29.5 V Drain Voltage (V ) 28 V D D Gate Voltage Range (V ) -8 to 0 V Drain Current (I ) 225 mA (Total) G DQ Drain Current (I ) 960 mA D1 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Drain Current (I ) 1440 mA D2 recommended operating conditions. Drain Current (I ) 5760 mA D3 Gate Currents (I /I /I ) See plot on page G1 G2 G3 Power Dissipation (P ), 85 C, CW 150 W DISS Input Power (P ), 50 , VD = 20 V, IN 30 dBm IDQ = 2500 mA, 85C, CW Input Power (PIN), VSWR 3:1, 30 dBm VD = 20 V, IDQ = 2500 mA, 85 C, CW Mounting Temperature (30 seconds) 320 C Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied Data Sheet Rev. C, July 2019 Subject to change without notice 3 of 17 www.qorvo.com