X-On Electronics has gained recognition as a prominent supplier of TGA4507 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA4507 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA4507 Qorvo

TGA4507 electronic component of Qorvo
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Part No.TGA4507
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 28-36 GHz LNA
Datasheet: TGA4507 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 35.8281
25 : USD 32.0544
100 : USD 28.7784
250 : USD 27.7074
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Type
Operating Frequency
Operating Supply Voltage
NF - Noise Figure
Operating Supply Current
Packaging
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGA4507 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA4507 and other electronic components in the RF Amplifier category and beyond.

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Product Data Sheet August 5, 2008 Ka Band Low Noise Amplifier TGA4507 Key Features Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 dB Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.86 x 0.85 x 0.1 mm (0.073 x 0.033 x 0.004 in) Primary Applications Point-to-Point Radio Preliminary Measured Data Bias Conditions: Vd = 3.0 V, Id = 60 mA Point-to-MultiPoint Radio 30 Ka Band VSAT Gain 20 10 0 ORL -10 IRL -20 -30 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) 3.0 2.5 2.0 1.5 1.0 26 28 30 32 34 36 38 40 Frequency (GHz) Note: Datasheet is subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw tqs.com Web: www.triquint.com Noise Figure (dB) Gain & Return Loss (dB)Product Data Sheet August 5, 2008 TGA4507 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES Vd Drain Voltage 5 V 2/ Vg Gate Voltage Range -1 TO +0.5 V Id Drain Current 280 mA 2/ 3/ Ig Gate Current 6 mA 3/ P Input Continuous Wave Power 12 dBm IN P Power Dissipation 0.35 W 2/ 4/ D 0 T Operating Channel Temperature 150 C 5/ 6/ CH 0 T Mounting Temperature (30 Seconds) 320 C M 0 T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ Total current for the entire MMIC. 4/ When operated at this bias condition with a base plate temperature of TBD, the median life is reduced from TBD to TBD hrs. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. THERMAL INFORMATION Parameter Test Condition T R MTTF CH JC (HRS) ( C) ( C/W) Vd = 3 V, 94 132 >1E6 R Thermal Resistance JC I = 60 mA (channel to backside of D carrier) Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw tqs.com Web: www.triquint.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc
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