TGA4544-SM 2631 GHz 1 Watt Power Amplifier Product Overview The Qorvo TGA4544-SM is a Ka-Band Power Amplifier with integrated power detector. The TGA4544-SM TriQuint operates from 26 31 GHz and is designed using TGA4544 Qorvos power pHEMT production process. 1406 MAL The TGA4544-SM typically provides 32 dBm of saturated output power with small signal gain of 23 dB. Third Order ACS368 Intercept is 41 dBm at 20 dBm SCL. 26 Lead 5 x 5 mm ACQFN package The TGA4544-SM is available in a low-cost, surface mount 26 lead 5x5 ACQFN package and is ideally suited for Point-to-Point Radio. Lead-free and RoHS compliant Key Features Frequency Range: 26 31 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 23 dB TOI: 41 dBm at 20 dBm/tone Integrated Power Detector Bias: Vd = 6 V, Idq = 1100 mA, Vg = -0.55 V Typical Package Dimensions: 5.0 x 5.0 x 1.3 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Point-to-Point Radio Ka-band Sat-Com Ordering Information Part No. Description TGA4544-SM 26 31 GHz 1W Power Amplifier TGA4544-SM-T/R 200 pieces on a 7 reel (standard) TGA4544-SMEVB Evaluation Board for TGA4544-SM Data Sheet Rev. A, June 10, 2020 Subject to change without notice 1 of 15 www.qorvo.com TGA4544-SM 26 31 GHz 1 Watt Power Amplifier Recommended Operating Conditions Absolute Maximum Ratings Parameter Min Typ. Max Units Parameter Value/Range Drain Voltage (V ) +6 V D Drain Voltage (VD) 6.5 V Drain Current, Quiescent (I ) 1.1 A DQ Gate Voltage Range (V ) -3.5 V to 0 V G Drain Current, RF (ID Drive) 1.7 A Drain to Gate Voltage, V - V 10 V D G Gate Voltage Typ. Range (VG) 0.3 to 0.75 V Drain Current (I ) 2.5 A D Gate Current, RF (IG Drive) 15 mA Gate Current (I ) -7 to +52 mA G 0 -40 C, -14 dBm Power Dissipation (PDISS), TBASE = 0 Input Power at PSAT (PIN) +25 C, -15 dBm dBm 16.2 W 85C 0 +85 C, -16 dBm Input Power (PIN), 50 , 25 dBm Operating Temp. Range (TBASE) 40 +85 C V = 6 V, I = 1.1 A, 25 C D DQ Electrical specifications are measured at specified test Channel Temperature, TCH 200 C conditions. Specifications are not guaranteed over all recommended operating conditions. Mounting Temperature (30 sec) 260 C Storage Temperature -55 to +155 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications (1) (2) Parameter Conditions Min Typ. Max Units Operational Frequency Range 26 31 GHz Output Power at Saturation, P P = 15 dBm 32 dBm SAT IN Output Power at 1 dB Gain Compression, 31 dBm P 1dB Small Signal Gain, S21 23 dB Input Return Loss, IRL CW 8 dB Output Return Loss, ORL CW 10 dB Output TOI P = 20 dBm 41 dBm OUT/TONE PSAT Temperature Coefficient TDIFF = 40 C to +85 C PIN = 15 dBm -0.01 dBm/C S21 Temperature Coefficient TDIFF = 40 C to +85 C -0.03 dB/C Notes: 1. Test conditions unless otherwise noted: Pulsed RF, VD = +6 V, IDQ = 1.1 A, VG = -0.55 V +/- typical, TBASE=+25 C, Z0=50 2. T is back side of TGA4544-SM BASE Data Sheet Rev. A, June 10, 2020 Subject to change without notice 2 of 15 www.qorvo.com