TGA2704SM 9 11 GHz 7 W GaAs Power Amplifier Product Overview Qorvos TGA2704-SM is a high power amplifier package fabricated on Qorvos production 0.25um pHEMT GaAs process. The TGA2704-SM operates from 911 GHz, provides 7 W of saturated output power with 21 dB of small signal gain and 40% poweradded efficiency. The TGA2704-SM features a ceramic QFN de-signed for surface mount to a printed circuit board. QFN 7 x 7 x 1.27 mm Air Cavity Laminate Package Fully matched to 50 Ohms and with integrated DC blocking capacitors on both I/O ports, the TGA2704-SM is ideally suited to support both commercial and defense related applications. Key Features Frequency Range:9 11 GHz Lead-free and RoHS compliant. P (P =22 dBm): 38.5 dBm SAT IN PAE (P =22 dBm): 40 % IN Small Signal Gain: 21 dB Bias: V =9V, I = 1.05 A, V = -0.7V typical D1 D1 G Package Dimensions: 7.0 x 7.0 x 1.27 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Point-to-Point Radio Satellite Communications Radar, Traffic Control Weather Monitoring Port Security Ordering Information Part No. Description TGA2704-SM 9 11 GHz 7 W GaAs PA TGA2704-SMEVB Evaluation Board Data Sheet Rev. A, Jan. 2020 Subject to change without notice 1 of 14 www.qorvo.com TGA2704-SM 9 11 GHz 7 W GaAs Power Amplifier Recommended Operating Conditions Absolute Maximum Ratings Parameter Rating Parameter Min Typ Max Units Drain Voltage (VD) 10 V Drain Voltage (V ) 9 V D Gate Voltage Range (V ) -1.2 to +0.5 V G Drain Current, Quiescent (IDQ) 1.05 A Drain Current (I ) 3.85 A D Drain Current, RF (ID Drive) See chart page 4, 6 mA Gate Current (I ) -14 to +126 mA G Gate Voltage Typ. Range (V ) 0.3 to 0.9 V RF Input Power, CW, 50, T=25C 23 dBm G Channel Temperature (TCH) 200 C Gate Current, RF (IG Drive) 1.5 mA Storage Temperature 55 to +150C Operating Temp. Range 40 +25 +85 C Mounting Temperature (30 seconds) 260C Electrical specifications are measured at specified test conditions. Exceeding any one or a combination of the Absolute Maximum Rating Specifications are not guaranteed over all recommended operating conditions may cause permanent damage to the device. Extended conditions. application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications (1) (2) Parameter Conditions Min Typ. Max Units Operational Frequency Range Unless Otherwise 9 11 GHz Output Power at Saturation, PSAT PIN = +22 dBm 38.5 dBm Output Power at 1dB compression, P = +16 to +17 dBm range 37.5 dBm IN P 1dB Power Added Efficiency, PAE P = +22 dBm 40 % IN Small Signal Gain, S21 21 dB Input Return Loss, IRL 10 dB Output Return Loss, ORL 13 dB PSAT Temperature Coefficient Tdiff = (85 (40)) C, Pin = +22 dBm 0.011 dBm/C Notes: 1. Test conditions unless otherwise noted: CW, V = 9V, I = 1.05 A, adjusting V (typical -0.7V), T =+25C, Z =50 D D G BASE 0 2. T is back side of package BASE Data Sheet Rev. A, Jan. 2020 Subject to change without notice 2 of 14 www.qorvo.com