TGA2760-SM 10 11.7 GHz Power Amplifier Product Overview Qorvos TGA2760-SM is a packaged X-band high power amplifier utilizing Qorvos production GaAs pHEMT and GaN processes. The TGA2760-SM operates from 10 11.7 GHz and typically provides 16W saturated power with power-added efficiency of 36% and large signal gain 30 dB. Third-order intermodulation is better than -30 dBc at 3 dB backed off from Psat. Along with the higher performance, an additional feature is an integrated power detector 20-Lead 8.0x10.0x2mm Package allowing the user to accurately monitor the output power of the unit. Key Features The TGA2760-SM is packaged in a small air-cavity surface mount package and matched to 50 ohms with integrated Frequency Range:10 11.7 GHz DC blocking capacitors on both RF I/O ports simplifying Power:+42dBm Psat system integration. Gain:33dB Integrated Power Detector Lead-free and RoHS compliant. Bias:VD1=VD2=+7V, ID1+ID2=1000mA, VD3=+28V, I =260mA D3 Package Dimensions: 8.0x10.0x2mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details Functional Block Diagram Applications Point-to-Point Radio 14 13 20 19 18 17 16 15 12 1 11 Ordering Information 2 3 4 5 6 7 8 9 10 Part No. Description Top View TGA2760-SM 10 11.7 GHz Power Amplifier TGA2760-SM-T/R 500 pieces on a 7 reel (standard) TGA2760-SM EVB Evaluation Board Data Sheet Rev. B, May 2020 Subject to change without notice 1 of 16 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential TGA2760-SM 10 11.7 GHz Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Drain Voltage, V , V +9V Operating Temp. Range 40 +25 +85 C D1 D2 Drain Voltage, V +32V V , V +7 V D3 D1 D2 Drain Current, I + I 3850mA V +28 V D1 D2 D3 Drain Current, ID3 2000mA ID1+ID2 1000 mA Power Dissipation, Driver Stages, PDISS 14.8W ID3 260 mA Power Dissipation, Final Stage, PDISS 28.8W VG12 0.7 V RF Input Power, CW, 50, T=25C +29dBm VG3 2.6 V I +I drive D1 D2 Mounting Temperature (30 Seconds) 260C 1018 mA (at +39dBm Pout) Storage Temperature 40 to 150C ID3 drive 930 mA Exceeding any one or a combination of the Absolute Maximum Rating (at +39dBm Pout) conditions may cause permanent damage to the device. Extended Electrical specifications are measured at specified test conditions. application of Absolute Maximum Rating conditions to the device may Specifications are not guaranteed over all recommended operating reduce device reliability. conditions. Electrical Specifications (1) Parameter Conditions Min Typ Max Units RF Frequency Range 10 11.7 GHz Small Signal Gain 27 33 dB Input Return Loss, IRL 8 dB Output Return Loss, ORL 8 dB Output Power at Pin = +12 dBm +39.5 +42 dBm Power Added Efficiency 36 % Output Third Order Intercept, TOI 30 dBm/Tone +52 dBm Gain Temperature Coefficient 0.05 dB/C Power Temperature Coefficient 0.01 dBm/C Notes: 1. Test conditions unless otherwise noted: VD1=VD2=+7V, ID1+ID2=1000mA, VG1=VG2=0.7V, VD3=+28V, ID3=260mA, VG3=2.6V, Temp=+25C, Z0=50 Data Sheet Rev. B, May 2020 Subject to change without notice 2 of 16 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential