X-On Electronics has gained recognition as a prominent supplier of GRF5511 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. GRF5511 RF Amplifier are a product manufactured by Guerrilla RF. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

GRF5511 Guerrilla RF

GRF5511 electronic component of Guerrilla RF
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See Product Specifications
Part No.GRF5511
Manufacturer: Guerrilla RF
Category: RF Amplifier
Description: RF Amplifier .7-6GHz GaAs Gain 20.1dB
Datasheet: GRF5511 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.828 ea
Line Total: USD 3.83 
Availability - 12640
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12640
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.828
10 : USD 3.63
100 : USD 3.344
250 : USD 2.97
500 : USD 2.662
1000 : USD 1.617
1500 : USD 1.474
4500 : USD 1.397

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Number Of Channels
Development Kit
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GRF5511 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GRF5511 and other electronic components in the RF Amplifier category and beyond.

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GRF5511 Released High Frequency Power-LNA Tuning Range: 0.7 8.0 GHz Product Description GRF5511 is a high linearity PA/Linear Driver with low noise figure (NF). It delivers excellent P1dB, IP3 and NF over a wide range of frequencies with fractional band- widths >15% and is well suited to demanding 802.11ac 5 GHz PA/driver applications. The device offers flexible biasing to achieve optimal lin- Features earity and efficiency and it can be tuned over a wide range of frequencies from 700 MHz up to 8 GHz. Reference: 5V/130mA/2.5GHz Consult with the GRF applications engineering team for Gain: 20.1 dB custom tuning/evaluation board data and device s- OP1dB: 26.1 dBm parameters. OIP3: 39.6 dBm Eval Board NF: 1.5 dB Reference: 5V/100mA/5.5 GHz Gain: 15.4 dB OP1dB: 25.8 dBm OIP3: 44.0 dBm Eval Board NF: 1.7 dB Flexible Bias Voltage and Current Process: GaAs pHEMT Applications PA/Driver for 802.11ac Linear Driver Amplifier for High PAR 3.0 x 3.0 mm QFN-16 Waveforms Multi-stage LNA Microwave Backhaul TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 05/21/20 1 GRF5511 Released High Frequency Power-LNA Tuning Range: 0.7 8.0 GHz Absolute Ratings: Parameter Symbol Min. Max. Unit Drain Voltage VDD 9.0 V Transient Average RF Input Power CW: (Load VSWR < 2:1 P 22.0 dBm IN MAX Duration: <1 hour) Operating Temperature (Package Heat Sink) TAMB -40 105 C Maximum Channel Temperature (MTTF > 10 6 Hours) TMAX 170 C Maximum Dissipated Power PDISS MAX 1.8 W Electrostatic Discharge: Charged Device Model: (TBD) CDM 1500 V Human Body Model: HBM 250 V Storage: Storage Temperature TSTG -65 150 C Moisture Sensitivity Level MSL 1 -- Caution ESD Sensitive Device Exceeding Absolute Maximum Rating conditions may cause permanent damage to the device. Note: For manufacturing information, see the Guerrilla -RF.com website for the following docu- ment located on the GRF5511 landing page: Manufacturing NoteMN-001 Product Tape and Reel, Solderability and Package Outline Specicatifi on. Link to manufacturing note TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 05/21/20 2

Tariff Desc

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