TGA3042-SM Qorvo

TGA3042-SM 710.5GHz 4.5W GaN Power Amplifier Product Description Qorvos TGA3042-SM is a packaged high power MMIC amplifier fabricated on Qorvos production 0.15um GaN on SiC process (QGaN15). The TGA3042-SM operates from 7 10.5 GHz and typically provides 4.5 W saturated output power with power-added efficiency of 38.5% and large- signal gain of 23.5 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The TGA3042-SM is matched to 50 with integrated DC blocking capacitors on both RF I/O ports simplifying system Product Features integration. The wideband performance makes it ideally suited in support of multiple radar and communication Frequency Range: 710.5GHz bands. P : 36.5dBm at P = 13dBm OUT IN PAE: 38.5% at PIN = 13dBm Lead-free and RoHS compliant. Large Signal Gain: 23.5 dB at PIN = 13 dBm Evaluation boards are available upon request. Small Signal Gain: 32 dB Bias: VD = 20V, IDQ = 200 mA Package Dimensions: 4.50 x 4.50 x 1.74mm Performance is typical across frequency. Please reference electrical specification table and data plots for Functional Block Diagram more details. 16 15 14 13 12 Applications Radar Communications 1 11 2 10 RF RF INPUT OUTPUT 3 9 4 5 6 7 8 Ordering Information Part No. Description TGA3042-SM 710.5GHz 4.5 W GaN Power Amplifier TGA3042- Evaluation Board SMPCB4B01 Data Sheet Rev. F, April 2021 Subject to change without notice - 1 of 18 - www.qorvo.com 2021 Qorvo US, Inc. All rights reserved. TGA3042-SM 710.5GHz 4.5W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (V ) 29.5 V Drain Voltage (V ) 20 V D D Gate Voltage Range (V ) 8 to 0 V Drain Current (I ) 200 mA G DQ Drain Current (ID) 720 mA Gate Voltage Range (VG) 2.8 to 2.0 V Electrical specifications are measured at specified test Gate Current (IG) See chart pg. 13 conditions. Specifications are not guaranteed over all Power Dissipation (PDISS), 85C 15.4 W recommended operating conditions. Input Power (PIN), CW, 50, 23 dBm VD=20 V, IDQ=200 mA, 85 C Input Power (PIN), CW, VSWR 3:1, 23 dBm V =20 V, I =200 mA 85 C D DQ Mounting Temperature (30 Seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 7 10.5 GHz Output Power (Pin = 13 dBm) 7.0 GHz 35.0 36.3 dBm 9.0 GHz 35.0 36.5 dBm 10.5 GHz 34.5 35.9 dBm Power Added Efficiency (Pin = 13 dBm) 7.0 GHz 30.0 41.1 % 9.0 GHz 30.0 38.9 % 10.5 GHz 28.0 37.8 % rd 3 Order Intermodulation Level 7.0 GHz 23.2 dBc (P /Tone= 26 dBm) 9.0 GHz 24.7 dBc OUT 10.5 GHz 23.4 dBc Small Signal Gain 7.0 GHz 33.3 dB 9.0 GHz 32.9 dB 10.5 GHz 30.6 dB Input Return Loss 7.0 GHz 12 dB 9.0 GHz 15 dB 10.5 GHz 18 dB Output Return Loss 7.0 GHz 9 dB 9.0 GHz 13 dB 10.5 GHz 10 dB Output Power Temperature Coefficient (2585 C) 0.006 dB/C Sm. Signal Gain Temperature Coefficient 0.059 dB/C Test conditions unless otherwise noted: 25 C, VD = 20, IDQ = 200 mA Data Sheet Rev. F, April 2021 Subject to change without notice - 2 of 18 - www.qorvo.com 2021 Qorvo US, Inc. All rights reserved.