MAAP-011233 Power Amplifier, 4 W Rev. V2 28.5 - 31.0 GHz Features Functional Schematic High Gain: 25 dB 30 GHz P1dB: 34.5 dBm P3dB: 36.0 dBm 32 31 30 29 28 27 26 25 IM3 Level: -27 dBc P 29 dBm/tone OUT GND 1 GND 24 Power Added Efficiency: 27.5% P3dB Lead-Free 5 mm 32-lead AQFN Package N/C 2 23 N/C RoHS* Compliant GND 3 GND 22 RF 4 RF IN 21 OUT Description GND 5 GND 20 The MAAP-011233 is a 4-stage, 4 W power amplifier N/C assembled in a lead-free 5 mm 32-lead AQFN 6 19 NC plastic package. This power amplifier operates from N/C 7 NC 18 28.5 to 31.0 GHz and provides 26 dB of linear gain, GND 8 17 GND 4 W saturated output power and 27.5% efficiency while biased at 6 V. 11 13 14 15 9 10 12 16 The MAAP-011233 can be used as a power amplifier ideally suited for VSAT communications. 3,4 This product is fabricated using a GaAs pHEMT Pin Configuration process which features full passivation for enhanced Pin Pin Name Description reliability. 1, 3, 5, 8, 9, 16, 17, GND Ground 20, 22, 24, 25, 32 2, 6, 7, 12, 13, N/C No Connection 18, 19, 23, 30 4 RFIN RF Input 10, 11 VG Gate Voltage 1,2 Ordering Information 14, 27, 28 VD3 Drain Voltage 3 15, 26 VD4 Drain Voltage 4 Part Number Package 21 RFOUT RF Output MAAP-011233 Bulk 29 VD2 Drain Voltage 2 MAAP-011233-TR0500 500 Piece Reel MAAP-011233-SMB Sample Board 31 VD1 Drain Voltage 1 1. Reference Application Note M513 for reel size information. 3. MACOM recommends connecting all No Connection (N/C) 2. All sample boards include 3 loose parts. pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAP-011233 Power Amplifier, 4 W Rev. V2 28.5 - 31.0 GHz Electrical Specifications: Freq. = 30 GHz, T = +25C, V = 6 V, Z = 50 A D 0 Parameter Test Conditions Units Min. Typ. Max. Gain P = 0 dBm dB 22 25.0 IN P P = +14 dBm dBm 34.5 36.0 OUT IN IM3 Level P = 29 dBm / tone dBc -27.0 OUT Power Added Efficiency P = +14 dBm % 27.5 IN Input Return Loss P = -20 dBm dB 10 IN Output Return Loss P = -20 dBm dB 10 IN Quiescent Current I (see bias conditions, page 4 ) mA 2000 DQ Current P = +14 dBm mA 2800 3600 IN 7,8 Maximum Operating Ratings Absolute Maximum Ratings Parameter Absolute Maximum Parameter Rating Input Power 20 dBm Input Power 14 dBm 5,6 Junction Temperature +160C Drain Voltage 6.5 V Operating Temperature -40C to +85C Gate Voltage -3 to 0 V 9 5. Operating at nominal conditions with junction temperature Junction Temperature +175C 6 +160C will ensure MTTF > 1 x 10 hours. 6. Junction Temperature (T ) = T + * (V * I) - (P - P ) . J C JC OUT IN Storage Temperature -65C to +125C Typical thermal resistance ( ) = 4.4 C/W. JC a) For T = +25C, C 7. Exceeding any one or combination of these limits may cause T = +82C 6 V, 2.8 A, P = 36 dBm, P = 14 dBm J OUT IN permanent damage to this device. b) For T = +85C, C 8. MACOM does not recommend sustained operation near these T = +137C 6 V, 2.5 A, P = 35 dBm, P = 14 dBm J OUT IN survivability limits. 9. Junction temperature directly effects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These electronics devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: