TGA4535-SM K-Band Power Amplifier Product Description The TriQuint TGA4535-SM is a K-Band Power Amplifier with integrated power detector. The TGA4535-SM operates from 21.2 23.6 GHz and is designed using TriQuints power pHEMT production process. The TGA4535-SM typically provides 34 dBm of saturated output power with small signal gain of 22 dB. Third Order Intercept is 40 dBm at 23 dBm SCL. The TGA4535-SM is available in a low-cost, surface mount 28 lead 5x5 QFN package and is ideally suited for 28 lead 5x5mm QFN package Point-to-Point Radio. Lead-free and RoHS compliant Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: 34 dBm Psat, 32 dBm P1dB Gain: 22 dB 28 27 26 25 24 23 22 TOI: 40 dBm at 23 dBm/tone Integrated Power Detector 21 1 Bias: Vd = 6 V, Idq = 1430 mA, Vg = -0.7 V Typical 2 20 VDET Package Dimensions: 5.0 x 5.0 x 1.3 mm 3 19 Performance is typical across frequency. Please RF OUT RF IN 4 18 reference electrical specification table and data plots for more details. 17 5 16 6 7 15 8 9 10 11 12 13 14 Ordering Information Applications Point-to-Point Radio Part Description TGA4535-SM Waffle Tray K-band Sat-Com TGA4535-SM-T/R 500 pieces on a 7 reel (standard) TGA4535-SM EVB Evaluation Board - 1 of 14 - Data Sheet Rev. G, April 23, 2020 Subject to change without notice www.qorvo.com VG1 VG2 VD1 VD2 VG3 VD3 VREFTGA4535-SM K-Band Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain to Gate Voltage, V V 10 V Drain Voltage 6 V D G (1) Drain Voltage (V ) 6.5 V Drain Current, Quiescent (I ) 1430 mA D DQ Drain Current (I ) 3.0 A Drain Current, RF (IDD Drive) See chart page 3 D Gate Voltage Range (V ) -3 to 0 V Gate Voltage, Typical Range (VG) 0.4 to 0.8 V G Gate Current, RF (I ) Typical 25 mA Gate Current (I ) -12 to +110 mA G Drive G Operating Temperature Range 40 to 85C Power Dissipation, P 20 W DISS Electrical specifications are measured at specified test RF Input Power, CW, T = 25 C 25 dBm conditions. Specifications are not guaranteed over all Channel Temperature, TCH 200 C recommended operating conditions. Mounting Temperature (30 seconds) 260 C (1) Min IDQ is 400mA. For large signal operation, stability is Storage Temperature 40 to 150 C degraded for I < 400mA DQ Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions, unless otherwise noted: 25 C, VD = 6 V, IDQ = 1430 mA, VG = -0.7 V typical, Z0 = 50 Parameter Min Typical Max Units Frequency 21.2 23.6 GHz Small Signal Gain 22 dB Input Return Loss 10 dB Output Return Loss 10 dB Output Power Saturation 34 dBm Output Power 1 dB Gain Compression 32 dBm Output TOI 23 dBm/Tone Pout/tone 40 dBm Gain Temperature Coefficient -0.02 dBm/C Power Temperature Coefficient -0.005 dBm/C - 2 of 14 - Data Sheet Rev. G, April 23, 2020 Subject to change without notice www.qorvo.com