SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier SBF5089Z DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMDs SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran- IP =41dBm at 240MHz 3 sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech- Stable Gain Over nology provides broadband performance up to 0.5GHz with excellent thermal Temperature performance. The heterojunction increases breakdown voltage and minimizes leak- age current between junctions. Cancellation of emitter junction non-linearities Robust 1000V ESD, Class 1C results in higher suppression of intermodulation products. Only a single positive Operates From Single Supply supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke Low Thermal Resistance are required for operation. Optimum Technology Applications Matching Applied GaAs HBT 25 0 Receiver IF Applications GaAs MESFET 22.5 -5 S21 Cellular, PCS, GSM, UMTS S11 InGaP HBT S22 20 -10 SiGe BiCMOS IF Amplifier 17.5 -15 Si BiCMOS Wireless Data, Satellite 15 -20 SiGe HBT Terminals 12.5 -25 GaAs pHEMT Si CMOS 10 -30 Si BJT 7.5 -35 GaN HEMT 5 -40 InP HBT 0 100 200 300 400 500 600 700 800 900 RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 20.5 dB 70MHz 18.5 20.0 21.5 dB 240MHz 18.0 19.5 21.0 dB 500MHz Output Power at 1dB Compression 21 dBm 70MHz 21 dBm 240MHz 19.2 20.7 dBm 400MHz Output Third Order Intercept Point 39.0 dBm 70MHz 41.0 dBm 240MHz 37.5 39.5 dBm 400MHz Input Return Loss 14 18 dB 500MHz Output Return Loss 12.0 16.0 dB 500MHz Noise Figure 2.8 3.8 dB 500MHz Device Operating Voltage 4.5 4.9 5.3 V Device Operating Current 82 90 98 mA Thermal Resistance 43 C/W junction to lead Test Conditions: V =8V, I =90mA Typ., T =25C. OIP Tone Spacing=1MHz, P per tone=0dBm, R =33 . Data with Application Circuit. S D L 3 OUT BIAS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS111011 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 8 SBF5089Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Device Current (I)150 mA D cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Device Voltage (V)6 V D mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RF Input Power +19 dBm RoHS status based on EUDirective2002/95/EC (at time of this document revision). Max Operating Dissipated Power 0.8 W The information in this publication is believed to be accurate and reliable. However, no Junction Temp (T)+150 C responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any J infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Operating Temp Range (T ) -40 to +85 C L RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Storage Temp +150 C ESD Rating - Human Body Model Class 1C (HBM) Moisture Sensitivity Level MSL 2 Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD Typical RF Performance at Key Operating Frequencies Parameter Unit 70MHz 100MHz 240MHz 400MHz 500MHz 850MHz Small Signal Gain dB 20.5 20.4 20.1 19.8 19.5 18.2 Output Third Order Intercept Point dBm 39 39 41 39.5 39 34 Output Power at 1dB Compression dBm 21.0 21.0 21.0 20.7 20.8 18.6 Input Return Loss dB 19.4 19.9 20.1 20.9 22.0 26.8 Output Return Loss dB 17.2 15.8 18.6 24.0 37.5 15.5 Reverse Isolation dB 25.2 22.4 22.3 22.3 22.3 22.4 Noise Figure dB 2.7 2.8 2.7 2.8 2.8 2.8 Test Conditions: V =8V, I =90mA Typ., OIP Tone Spacing=1MHz, P per tone=0dBm. T =25C, R =33 , Z =Z =50 , App circuit. S D 3 OUT L BIAS S L 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 8 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS111011