X-On Electronics has gained recognition as a prominent supplier of SXB2089Z RF Amplifier across the USA, India, Europe, Australia, and various other global locations. SXB2089Z RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

SXB2089Z Qorvo

SXB2089Z electronic component of Qorvo
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See Product Specifications
Part No.SXB2089Z
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 5-2500MHz SSG 17dB NF 4.7dB PqdB 24dBm
Datasheet: SXB2089Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 3.6958
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 7.7583
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 7.6406
25 : USD 4.7702
100 : USD 4.0597
250 : USD 3.603
500 : USD 3.362
1000 : USD 3.1336
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Test Frequency
Brand
Development Kit
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SXB2089Z from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SXB2089Z and other electronic components in the RF Amplifier category and beyond.

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SXB2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier SXB2089Z 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMDs SXB2089Z amplifier is a high linearity InGaP/GaAs Heterojunc- High OIP :+43dBm at 3 tion Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mount- 1960MHz able plastic package. These amplifiers are specially designed for use as P :24dBm 1dB driver devices for infrastructure equipment in the 5MHz to 2500MHz Cel- lular, ISM, WLL, PCS, and W-CDMA applications. Its high linearity makes it High Linearity/ACP Perfor- an ideal choice for multi-carrier as well as digital applications. mance Robust 2000V ESD, Class 2 SOT-89 Package Optimum Technology Matching Applied Typical IP3, P1dB, Gain Applications 50 GaAs HBT IP3 IP3 45 IP3 PA Driver Amplifier GaAs MESFET 40 IF Amplifier 35 InGaP HBT 30 P1dB SiGe BiCMOS Cellular, PCS, ISM, WLL, P1dB P1dB Gain 25 W-CDMA Si BiCMOS Gain 20 Gain SiGe HBT 15 10 GaAs pHEMT 5 Si CMOS 0 Si BJT 880 MHz 1960 MHz 2140 MHz GaN HEMT RF MEMS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 25.0 dBm 450MHz 21.5 23.0 24.5 dBm 880MHz 15.5 17.0 21.5 dBm 1960MHz 17.0 dBm 2140MHz Input VSWR 1.1 450MHz 1.4 2.5 880MHz 1.6 1960MHz 1.3 2140MHz Output Power at 1dB Compression 24.0 dBm 450MHz 23.0 24.5 dBm 880MHz and 1960MHz 24.5 dBm 2140MHz Third Order Intercept Point 40.0 dBm 450MHz 38.0 41.0 dBm 880MHZ 40.0 43.0 dBm 1960MHz 43.0 dBm 2140MHz Noise Figure 4.9 dB 450MHz 4.5 6.0 dB 880MHz 4.7 dB 1960MHz 4.2 dB 2140MHz Channel Power IS-95 16.0 dBm 450MHz, IS-95, -55dBc ACP 16.3 dBm 880MHz, IS-95, -55dBc ACP 15.5 dBm 1960MHz, IS-95, -55dBc ACP 15.6 dBm 2140MHz, WCDMA, -50dBc ACP Thermal Resistance 51.3 C/W junction - lead Device Operating Current 120 135 150 mA V =8v, R =20 , V =5.2V S BIAS DEVICE Test Conditions: T =25C, Z =50 P per tone=+11dBm, ToneSpacing=1MHz A 0 OUT RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110610 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 8SXB2089Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Device Current (I)190 mA DQ Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Device Voltage (V)6 V D tions is not implied. RF Input Power 20 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No Junction Temp (T)+150 C J license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Operating Temp Range (T )-40 to +85 C cation circuitry and specifications at any time without prior notice. L Storage Temp +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in Operating Dissipated Power (qui- 1.0 W solder. escent) ESD Rating - Human Body Model Class 2 (HBM) Moisture Sensitivity Level MSL 2 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD DCIV over Temperature (with App. Circuits) 250 200 Id (25C) 150 Id (-40C) Id (85C) 100 50 Simplified Device Schematic with ESD diodes Narrowband 0 App. Ckt. 02 4 6 8 10 Vc/Output Voltage (V) Input Narrowband App. Ckt. Noise Figure (with Application Circuits) 6 25C Gnd 85C 5 4 3 2 1 0 450 MHz 880 MHz 1960 MHz 2140 MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 8 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110610 Id (mA) NF (dB)

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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