SXB2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier SXB2089Z 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMDs SXB2089Z amplifier is a high linearity InGaP/GaAs Heterojunc- High OIP :+43dBm at 3 tion Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mount- 1960MHz able plastic package. These amplifiers are specially designed for use as P :24dBm 1dB driver devices for infrastructure equipment in the 5MHz to 2500MHz Cel- lular, ISM, WLL, PCS, and W-CDMA applications. Its high linearity makes it High Linearity/ACP Perfor- an ideal choice for multi-carrier as well as digital applications. mance Robust 2000V ESD, Class 2 SOT-89 Package Optimum Technology Matching Applied Typical IP3, P1dB, Gain Applications 50 GaAs HBT IP3 IP3 45 IP3 PA Driver Amplifier GaAs MESFET 40 IF Amplifier 35 InGaP HBT 30 P1dB SiGe BiCMOS Cellular, PCS, ISM, WLL, P1dB P1dB Gain 25 W-CDMA Si BiCMOS Gain 20 Gain SiGe HBT 15 10 GaAs pHEMT 5 Si CMOS 0 Si BJT 880 MHz 1960 MHz 2140 MHz GaN HEMT RF MEMS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 25.0 dBm 450MHz 21.5 23.0 24.5 dBm 880MHz 15.5 17.0 21.5 dBm 1960MHz 17.0 dBm 2140MHz Input VSWR 1.1 450MHz 1.4 2.5 880MHz 1.6 1960MHz 1.3 2140MHz Output Power at 1dB Compression 24.0 dBm 450MHz 23.0 24.5 dBm 880MHz and 1960MHz 24.5 dBm 2140MHz Third Order Intercept Point 40.0 dBm 450MHz 38.0 41.0 dBm 880MHZ 40.0 43.0 dBm 1960MHz 43.0 dBm 2140MHz Noise Figure 4.9 dB 450MHz 4.5 6.0 dB 880MHz 4.7 dB 1960MHz 4.2 dB 2140MHz Channel Power IS-95 16.0 dBm 450MHz, IS-95, -55dBc ACP 16.3 dBm 880MHz, IS-95, -55dBc ACP 15.5 dBm 1960MHz, IS-95, -55dBc ACP 15.6 dBm 2140MHz, WCDMA, -50dBc ACP Thermal Resistance 51.3 C/W junction - lead Device Operating Current 120 135 150 mA V =8v, R =20 , V =5.2V S BIAS DEVICE Test Conditions: T =25C, Z =50 P per tone=+11dBm, ToneSpacing=1MHz A 0 OUT RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110610 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 8SXB2089Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Device Current (I)190 mA DQ Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Device Voltage (V)6 V D tions is not implied. RF Input Power 20 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No Junction Temp (T)+150 C J license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Operating Temp Range (T )-40 to +85 C cation circuitry and specifications at any time without prior notice. L Storage Temp +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in Operating Dissipated Power (qui- 1.0 W solder. escent) ESD Rating - Human Body Model Class 2 (HBM) Moisture Sensitivity Level MSL 2 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD DCIV over Temperature (with App. Circuits) 250 200 Id (25C) 150 Id (-40C) Id (85C) 100 50 Simplified Device Schematic with ESD diodes Narrowband 0 App. Ckt. 02 4 6 8 10 Vc/Output Voltage (V) Input Narrowband App. Ckt. Noise Figure (with Application Circuits) 6 25C Gnd 85C 5 4 3 2 1 0 450 MHz 880 MHz 1960 MHz 2140 MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 8 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110610 Id (mA) NF (dB)