SBB3089Z 50MHz to 6000MHz Gain Block Product Overview The SBB3089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. The SBB3089Z product is designed for high linearity 5V gain 3-pin SOT89 Package block applications that require excellent gain flatness, small size, and minimal external components. It is internally Key Features matched to 50. 50MHz 6000MHz Operational Frequency Patented Thermal Design and Self Bias Circuit Gain = 16.4dB at 1950MHz P1dB = +15.2dBm at 1950MHz OIP3 = +29.5dBm at 1950MHz Single Fixed 5V Supply Robust 1000V ESD, Class 1C HBM Applications PA Driver Amplifier Functional Block Diagram Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Wideband Instrumentation Ordering Information Part No. Description SBB3089Z 7 Reel with 1000 pieces 500MHz to 3500MHz PCBA with SBB3089ZPCK1 5-piece sample bag Top View Data Sheet, June 8, 2021 Subject to change without notice 1 of 9 www.qorvo.com SBB3089Z 50MHz to 6000MHz Gain Block Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to 150C TCASE 40 +85 C Electrical specifications are measured at specified test conditions. RF Input Power, CW, 50, T=+25C +20dBm Specifications are not guaranteed over all recommended operating Device Voltage (V ) +6V CC conditions. Application of conditions to the device outside the Device Current (I ) 100 mA CC Recommended Operating Conditions may reduce device reliability and performance. Junction Temperature (T ) +150 C J Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 50 6000 MHz 850MHz 15.1 16.6 18.1 dB Gain 1950MHz 14.9 16.4 17.9 dB 2400MHz 16.3 dB Input Return Loss 1950MHz 16 21 dB Output Return Loss 1950MHz 19 25.5 dB 850MHz +15.6 dBm Output P1dB 1950MHz +14.2 +15.2 dBm 2400MHz +15.4 dBm Pout= -5 dBm/tone, f = 1 MHz, Center Freq.= 850MHz +30 dBm Output IP3 Pout= -5 dBm/tone, f = 1 MHz, Center Freq.= 1950MHz +27.5 +29.5 dBm Pout= -5 dBm/tone, f = 1 MHz, Center Freq.= 2400MHz +29.5 dBm Noise Figure 1950MHz 3.9 4.9 dB Device Operating Voltage (VCC) RDC=20, VS=+5.0V 4.2 4.3 V Device Operating Current (ICC) RDC=20, VS=+5.0V 38 42 46 mA Thermal Resistance, Junction to case 80 C/W jc Notes: 1. Test conditions unless otherwise noted: VS= +5.0V, VCC = +4.2V, ICC = 42mA, RDC=20, Temp= +25C , 50 system. 2. Supply voltage (V ) and bias resistor (R ) values are related by: R =(V -V )/I S DC DC S CC CC Data Sheet, June 8, 2021 Subject to change without notice 2 of 9 www.qorvo.com