SBA4089Z SBA4089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMDs SBA4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran- IP3=33.5dBm at 1950MHz sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech- P =13.3dBm at -45dBc OUT nology provides broadband performance up to 5GHz with excellent thermal ACP IS-95 1950MHz performance. The heterojunction increases breakdown voltage and minimizes leak- Robust 1000V ESD, Class 1C age current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive Operates From Single Supply supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke Patented Thermal Design are required for operation. Optimum Technology Applications Matching Applied GaAs HBT Gain and Return Loss vs Frequency PA Driver Amplifier 20 GaAs MESFET 15 Cellular, PCS, GSM, UMTS 10 InGaP HBT S21 5 SiGe BiCMOS IF Amplifier 0 -5 Si BiCMOS Wireless Data, Satellite -10 SiGe HBT -15 Terminals S22 -20 GaAs pHEMT -25 S11 -30 Si CMOS -35 Si BJT -40 -45 GaN HEMT -50 InP HBT 01 23 4 5 6 Frequency (GHz) RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 13.5 15.0 16.5 dB 850MHz 13.1 14.6 16.1 dB 1950MHz Output Power at 1dB Compression 19.2 dBm 850MHz 17.5 19.0 dBm 1950MHz Output Third Order Intercept Point 36.5 dBm 850MHz 31.5 33.5 dBm 1950MHz Output Power 13.3 dBm 1950MHz, -45dBc ACP IS-95 9 Forward Channels Bandwidth 4400 MHz Return Loss>10dB Input Return Loss 14.0 21.0 dB 1950MHz Output Return Loss 11.0 15.0 dB 1950MHz Noise Figure 4.8 5.8 dB 1950MHz Device Operating Voltage 4.8 5.0 5.4 V Device Operating Current 72 80 88 mA Thermal Resistance (junction to lead) 70 C/W Test Conditions: V =8V, I =80mA Typ., OIP Tone Spacing=1MHz, P per tone=0dBm, R =39 , T =25C, Z =Z =50 S D 3 OUT BIAS L S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS111204 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 6 dBSBA4089Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Device Current (I)130 mA D cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Device Voltage (V)6 V D mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RF Input Power +17 dBm RoHS status based on EUDirective2002/95/EC (at time of this document revision). Junction Temp (T)+150 C J The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Operating Temp Range (T ) -40 to +85 C L infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Storage Temp +150 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Operating Dissipated Power 0.65 W Moisture Sensitivity Level MSL 2 Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD Typical Performance at Key Operating Frequencies Parameter Unit 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz Small Signal Gain dB 15.3 15.3 15.0 14.6 14.3 13.2 Output Third Order Intercept dBm 37.1 36.2 36.5 33.5 32.7 30.5 Point Output Power at 1dB dBm 19.0 19.1 19.0 19.0 18.3 16.3 Compression Input Return Loss dB 47 33 29 21 17.5 13.3 Output Return Loss dB 22 22 21 15 13.3 12 Reverse Isolation dB 18 1818.719 19 19 Noise Figure dB 4.1 4.3 4.2 4.8 - - Test Conditions: V =8V, I =80mA Typ., OIP Tone Spacing=1MHz, P per tone=0dBm, R =39 , T =25C, Z =Z =50 S D 3 OUT BIAS L S L OIP3 vs Frequency Noise Figure vs Frequency 40 7.00 38 6.00 36 34 5.00 32 4.00 30 3.00 28 26 2.00 +25c +25c 24 -40c 1.00 -40c +85c 22 +85c 0.00 20 00.5 11.5 22.5 33.5 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) Frequency (GHz) P1dB vs Frequency 22 +25c 21 -40c +85c 20 19 18 17 16 15 00.5 1 1.5 22.5 33.5 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 6 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS111204 dB dBm dBm