RFPD3890 RFPD3890 27dB Power Doubler Hybrid 40MHz to 1003MHz Package: SOT-115J The RFPD3890 is a hybrid power doubler amplifier module. The part employs GaAs MESFET, GaAs pHEMT and GaN Features HEMT die, has high output capability, and is operated from Low Current 40MHz to 1003MHz. It provides excellent linearity and Excellent Linearity superior return loss performance with low noise and optimal Superior Return Loss Performance reliability. Extremely Low Distortion Optimal Reliability V+ Low Noise Unconditionally Stable Under All Terminations High Output Capability INPUT OUTPUT 27.0dB Min. Gain at 1003MHz 385mA Max. at 24V DC Applications 40MHz to 1003MHz CATV Amplifier Systems Ordering Information RFPD3890 Box with 50 Pieces Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit RF Input Voltage (single tone) 70 dBmV DC Supply Over-Voltage (5 minutes) 30 V RoHS (Restriction of Hazardous Storage Temperature -40 to +100 C Substances): Compliant per EU Directive 2011/65/EU. Operating Mounting Base Temperature -30 to +100 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS141120 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. 1 of 3 RFPD3890 Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max General Performance V+ = 24V T = 30C Z = Z = 75 MB S L 25.5 26.0 26.5 dB f = 50MHz Power Gain 27.0 27.5 28.0 dB f = 1003MHz 1 Slope 0.5 1.5 2.0 dB f = 40MHz to 1003MHz Flatness of Frequency Response 0.8 dB f = 40MHz to 1003MHz Input Return Loss 20 dB f = 40MHz to 320MHz 18 dB f = 320MHz to 640MHz 17 dB f = 640MHz to 870MHz 15 dB f = 870MHz to 1003MHz Output Return Loss 20 dB f = 40MHz to 320MHz 19 dB f = 320MHz to 640MHz 18 dB f = 640MHz to 870MHz 16 dB f = 870MHz to 1003MHz Noise Figure 5.0 5.5 dB f = 50MHz to 1003MHz Total Current Consumption (DC) 370.0 385.0 mA Distortion Data 40MHz to 550MHz V+ = 24V T = 30C Z = Z = 75 MB S L CTB -73 -68 dBc XMOD -67 -62 dBc V = 56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79 analog O 2 , 4 channels plus 75 digital channels (-6dB offset) CSO -70 -65 dBc CIN 57 62 dB CTB -69 dBc 3 , 4 XMOD -63 dBc V = 52.0dBmV at 547.25MHz, 7dB tilt, 79 analog channels O CSO -75 dBc 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. 3. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +45dBmV to +52dBmV tilted output level 4. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS141120 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3