RFPD3210 RFPD3210 GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz Package: SOT-115J The RFPD3210 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has Features high output capability, and operates from 45MHz to 1218MHz. Excellent Linearity It provides excellent linearity and superior return loss Superior Return Loss Performance performance with low noise and optimal reliability. Extremely Low Distortion Optimal Reliability V+ Low Noise Unconditionally Stable Under All Terminations Extremely High Output Capability INPUT OUTPUT 22.5dB Min. Gain at 1218MHz 480mA Max. at 24V DC Applications 45MHz to 1218MHz CATV Amplifier Systems Ordering Information RFPD3210 Box with 50 pieces Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit RF Input Voltage (single tone) 75 dBmV DC Supply Over-Voltage (5 minutes) 30 V RoHS (Restriction of Hazardous Storage Temperature -40 to +100 C Substances): Compliant per EU Directive 2011/65/EU. Operating Mounting Base Temperature -30 to +100 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS151205 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 1 of 3 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. RFPD3210 Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max General Performance V+ = 24V T = 30C Z = Z = 75 MB S L 21.3 21.8 22.3 dB f = 45MHz Power Gain 22.5 22.8 24.0 dB f = 1218MHz 1 Slope 0.5 1.0 2.0 dB f = 45MHz to 1218MHz Flatness of Frequency Response 0.8 dB f = 45MHz to 1218MHz Input Return Loss 20 dB f = 45MHz to 320MHz 19 dB f = 320MHz to 640MHz 18 dB f = 640MHz to 870MHz 18 dB f = 870MHz to 1000MHz 17 dB f = 1000MHz to 1218MHz Output Return Loss 20 dB f = 45MHz to 320MHz 19 dB f = 320MHz to 640MHz 18 dB f = 640MHz to 870MHz 18 dB f = 870MHz to 1000MHz 17 dB f = 1000MHz to 1218MHz Noise Figure 3.0 4.0 dB f = 50MHz to 1218MHz Total Current Consumption (DC) 470 480 mA Distortion Data 40MHz to 550MHz V+ = 24V T = 30C Z = Z = 75 MB S L CTB -73 -68 dBc XMOD dBc -68 -63 V = 62dBmV at 1000MHz, 18dB extrapolated tilt, 79 analog channels O 2 4 plus 75 digital channels (-6dB offset) CSO dBc -76 -70 CIN 55 dB 57 Distortion Data 40MHz to 550MHz V+ = 24V T = 30C Z = Z = 75 MB S L CTB -78 dBc XMOD dBc -77 V = 62dBmV at 1218MHz, 22dB extrapolated tilt, 79 analog channels O 3 4 plus 111 digital channels (-6dB offset) CSO dBc -80 CIN 58 dB 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +44dBmV to +53.4dBmV tilted output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. 3. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +40dBmV to +49.4dBmV tilted output level, plus 111 digital channels, -6dB offset relative to the equivalent analog carrier. 4. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS151205 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3