X-On Electronics has gained recognition as a prominent supplier of RFPA2172TR13 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. RFPA2172TR13 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

RFPA2172TR13 Qorvo

RFPA2172TR13 electronic component of Qorvo
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Part No.RFPA2172TR13
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 400-2500MHz Pout 23.5dBm @2.5GHz
Datasheet: RFPA2172TR13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 7.7578
25 : USD 5.5022
100 : USD 4.7158
250 : USD 4.0588
500 : USD 3.531
1000 : USD 2.9913
2500 : USD 2.4048
5000 : USD 1.959
10000 : USD 1.7244
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We are delighted to provide the RFPA2172TR13 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFPA2172TR13 and other electronic components in the RF Amplifier category and beyond.

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GND GND GND GND APC VCC VPD GND GND GND RFMD + TriQuint = Qorvo RFPA2172 RFPA2172 ISM Band 3.6V, 250mW AMP with Analog Gain Control Package: QFN, 16-pin, 4.0mm x 4.0mm The RFPA2172 is a medium-power high efficiency amplifier IC targeting 3.6 V handheld systems. The device is manufactured on an advanced Features Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and 23.5dBm Typical Output Power has been designed for use as the final RF amplifier in 2.45 GHz 0dB to 28dB Variable Gain Bluetooth applications and frequency hopping/direct sequence spread- 45% Efficiency at Max Output spectrum cordless telephones or other applications in the 902 MHz to On-Board Power Down Mode 928 MHz ISM band. The device is packaged in a compact 4 mm x 4 mm 2.4GHz to 2.5GHz Operation QFN. The device features analog gain control to optimize transmit power while maximizing battery life in portable equipment requiring up to 902MHz to 928MHz Operation 100 mW transmit power at the antenna port. Applications Bluetooth PA 1 16 15 14 13 2.4GHz to 2.5GHz ISM Band GND 2 12 RF OUT Systems 902MHz to 928MHz ISM Band 3 11 RF OUT RF IN Systems 3.6V Spread-Spectrum Cordless Bias GND 4 10 GND Phones Portable Battery-Powered 5 6 7 8 9 Equipment Spread-Spectrum Systems Functional Block Diagram Ordering Information RFPA2172 Standard 25 piece bag RFPA2172SR Standard 100 piece reel RFPA2172TR13 Standard 2500 piece reel RFPA2172TR13-5K Standard 5000 piece reel RFPA2172PCK-410 Fully assembled evaluation board tuned for 902MHz to 928MHz with 5 piece bag RFPA2172PCK-411 Fully assembled evaluation board tuned for 2.4GHz to 2.5GHz with 5 piece bag Revision DS20170508 1 of 12 Disclaimer: Subject to change without notice 2015 RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com 1 of 12 RFMD + TriQuint = Qorvo Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Supply Voltage (RF off) -0.5 to +6.0 VDC APC Current (Maximum) +10 mA Control Voltage (VPD) VDC -0.5 to +6.0 RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this Input RF Power +10 dBm document revision), halogen free per IEC 61249-2-21, < 1000ppm each of antimony Operating Case Temperature -40 to +85 C trioxide in polymeric materials and red Storage Temperature -55 to +155 C phosphorus as a flame retardant, and <2% antimony in solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max Overall T= 25C, VCC= 3.6V, VPD= 3.6V, VAPC= 3.0V Usable Frequency Range 400 to 2500 MHz Input Impedance 50 Input VSWR 1.8:1 Without Input Match Output Load VSWR <10:1 0VAPC3.0V <6:1 0VAPC3.6V 2.45GHz Operation Freq= 2.4GHz to 2.5GHz, PIN= 0dBm Operating Frequency 2.4 to 2.5 GHz Maximum Output Power 22 +23.5 24.5 dBm Total Efficiency 45 % Reverse Isolation -45 dB Second Harmonic -38 -34 dBc Third Harmonic -45 -40 dBc All Other Spurious -50 dBc Gain Control Voltage 0 to VCC V High Gain 23.5 dB V = 3.6V, V = 3.6V, P = 0dBm APC CC IN Low Gain -9 dB V = 0V, V = 3.6V, P = 0dBm APC CC IN 900MHz Operation Freq= 902MHz to 928MHz, P = 3.0dBm IN Operating Frequency 902 to 928 MHz Maximum Output Power +26 dBm Total Efficiency 58 % Reverse Isolation -35 dB Second Harmonic -40 dBc Third Harmonic -40 dBc All Other Spurious -50 dBc Gain Control Voltage 0 to VCC V Gain Control Slope 20 dB/V Gain 0 to 28 dB Revision DS20170508 1 of 12 Disclaimer: Subject to change without notice 2015 RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com 2 of 12

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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