RFCM3327 45-1218 MHz GaAs/GaN Power Doubler Module POWER DOUBLER MODULE Product Overview The RFCM3327 is a Power Doubler amplifier SMD Module. The part employs GaAs pHEMT die and GaN HEMT die, RFCM3327 has high output capability, and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. DC current of the device can be externally adjusted for 9 pin, 9.0 mm x 8.0 mm x 1.375 mm optimum distortion performance versus power consumption over a wide range of output level. Key Features Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Low Noise Unconditionally Stable Under all Terminations Functional Block Diagram Extremely High Output Capability Current Temperature 22.5 dB Min. Gain at 1218 MHz Setting Sensing V+ 480 mA Max. at 24 VDC Temperature Sensing Feature INPUT OUTPUT RFCM3327 Applications 45 MHz to 1218 MHz CATV Amplifier Systems Ordering Information Part No. Description RFCM3327SB Sample bag with 5 pieces RFCM3327SR 7 Reel with 100 pieces RFCM3327TR13 13 Reel with 1000 pieces RFCM3327PCBA-410 Fully Assembled Evaluation Board Data Sheet Rev.E, October 20, 2021 Subject to change without notice 1 of 8 www.qorvo.com RFCM3327 45-1218 MHz GaAs/GaN Power Doubler Module Absolute Maximum Ratings Parameter Rating RF Input Voltage (single tone on evaluation board) 75 dBmV DC Supply Over-Voltage (5 minutes) 30 V Storage Temperature 40 to +100C Operating Mounting Base Temperature 30 to +110C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 45 1218 MHz Power Gain 45 MHz 21.5 22.0 22.5 dB 1218 MHz 22.5 23.0 24.0 dB (2) Slope 45 MHz to 1218 MHz 0.5 1.5 2.0 dB Flatness of Frequency Response 45 MHz to 1218 MHz (Peak to Valley) 1.5 dB Input Return Loss 45 MHz to 320 MHz -20 dB 320 MHz to 640 MHz -19 dB 640 MHz to 870 MHz -18 dB 870 MHz to 1000 MHz -16 dB 1000 MHz to 1218 MHz -15 dB Output Return Loss 45 MHz to 320 MHz -18 dB 320 MHz to 640 MHz -17 dB 640 MHz to 1218 MHz -16 dB Noise Figure 50 MHz to 1218 MHz 2.5 3.5 dB Total Current Consumption (DC) 470 480 mA Thermal Resistance Junction to Mounting Base 3.7 K/W CTB VO = 61 dBmV at 1218 MHz, -80 -74 dBc 22 dB extrapolated tilt, XMOD -76 -72 dBc 79 analog channels plus CSO -80 -74 dBc (3)(5) 111 digital channels (-6 dB offset) CIN 55 58 dB CTB V = 62 dBmV at 1000 MHz, -73 dBc O 18 dB extrapolated tilt, XMOD -68 dBc 79 analog channels plus CSO -68 dBc (4)(5) 75 digital channels (-6 dB offset) CIN 55 dB Notes: 1. Test conditions unless otherwise noted: V+=24 V, T =30 C, Z =Z =75 , I =I typical. MB S L DC DC 2. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 3. 79 analog channels, NTSC frequency raster: 55.25 MHz to 547.25 MHz, +39 dBmV to +48.3 dBmV tilted output level, plus 111 digital channels, -6 dB offset relative to the equivalent analog carrier. 4. 79 analog channels, NTSC frequency raster: 55.25 MHz to 547.25 MHz, +44 dBmV to +53.4 dBmV tilted output level, plus 75 digital channels, -6 dB offset relative to the equivalent analog carrier. 5. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by ANSI/SCTE 6. Composite Triple Beat (CTB) - The CTB parameter is defined by ANSI/SCTE 6. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). Data Sheet Rev.E, October 20, 2021 Subject to change without notice 2 of 8 www.qorvo.com