X-On Electronics has gained recognition as a prominent supplier of RFDA0025TR13 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. RFDA0025TR13 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

RFDA0025TR13 Qorvo

RFDA0025TR13 electronic component of Qorvo
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Part No.RFDA0025TR13
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier DVGA, 0.05 - 0.85GHz 20dBm, 18.5dB
Datasheet: RFDA0025TR13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 8.8773
25 : USD 6.8053
100 : USD 5.3222
250 : USD 4.6494
500 : USD 4.3344
1000 : USD 3.9942
2500 : USD 3.843
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFDA0025TR13 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFDA0025TR13 and other electronic components in the RF Amplifier category and beyond.

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AMP RFDA0025Dig- ital Controlled Variable Gain Amplifier RFDA0025 DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM 32-Pin, 5.2mmx5.2mm 32 31 30 29 28 27 26 25 1 24 AMPIN NC Features 2 23 GND NC 6-bit SPI 50MHz to 850MHz Operation 3 22 GND NC 6-Bit Digital Step Attenuator 4 21 ATTOUT NC Serial Control Interface 5 20 ACG1 NC 31.5dB Attenuation Range DSA (0.5dB Step) 6 19 ACG2 NC High OIP3/P1dB=+42/20dBm 7 18 ACG3 NC Single +5V Supply 8 17 ACG4 Vdd Footprint Compatible with 32-Pin 9 10 11 12 13 14 15 16 5mmx5mm QFN E-pad GND Applications Functional Block Diagram Transceiver IF DVGA Cellular, PCS, 3G Infrastructure Product Description Wireless Data, Satellite RFMDs RFDA0025 is a digital controlled variable gain amplifier featuring high lin- Terminals earity over the entire gain control range. The 6-bit digital step attenuator is pro- grammed with a serial mode control interface. The RFDA0025 is packaged in a small 5.2mmx5.2mm leadless laminate MCM with plated through thermal vias for ultra low thermal resistance. The footprint for this module is directly compatible with most 32-pin 5mmx5mm QFNs. The amplifiers bias choke and DC blocks are external, allowing for optimum performance over specific bands within 50MHz to 850MHz. Ordering Information RFDA0025SQ Sample bag with 25 pieces RFDA0025SR 7 Reel with 100 pieces RFDA0025R7 7 Reel with 750 pieces RFDA0025R13 13 Reel with 2500 pieces RFDA0025PCK-410 50MHz to 850MHz PCBA with 5-piece sample bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS RF MEMS InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS101202 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 11 ACG5 GND ACG6 GND GND GND ATTIN AMPOUT GND GND NC LE PUP DATA NC CLKRFDA0025 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Supply Voltage (V , V)5.5 V Exceeding any one or a combination of the Absolute Maximum Rating conditions may CC DD cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Collector Current (I ) 115 mA C mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Power Dissipation 630 mW RoHS status based on EUDirective2002/95/EC (at time of this document revision). Input RF Power +20 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Operating Temperature (T )-40 to +85 C CASE infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Storage Temperature -40 to +150 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Junction Temperature (T)+150 C J ESD Rating (HBM) Class 1B Moisture Sensitivity Level MSL 3 Notes: 1. PDISS=VCC*I -RF Output Power+RF Input Power C Specification Parameter Unit Condition Min. Typ. Max. Frequency 50 850 MHz Gain - 150MHz (Max Gain State) 18.7 dB Attenuation=0dB, 150MHz Gain - 850MHz (Max Gain State) 16.2 17.7 19.2 dB Attenuation=0dB, 850MHz Gain Control Range 31.5 dB 0.5dB LSB, 6 bits Step Accuracy (0.1 +5% attenuation setting) dB Major state max error Output IP3 - 150MHz 42 dBm 150MHz, P =0dBm/tone, 1MHz spacing OUT Output IP3 - 850MHz 33 35 dBm 850MHz, P =0dBm/tone, 1MHz spacing OUT Output P1dB 17 20 dBm Attenuation=0dB Input Return Loss 20 dB 150MHz Output Return Loss 25 dB 150MHz Noise Figure 4.7 dB 150MHz, Attenuation=0dB t , t 250 ns 10/90% RF RISE FALL Amplifier Supply Voltage (V ) 4.75 5 5.25 V CC Attenuator Supply Voltage (V ) 3.3 5 5.25 V DD Total Supply Current 80 90 100 mA Sum of currents from V and V DD CC Thermal Resistance 57 C/W Control Interface 6-Bit, Serial Control Voltages Low, V =0 to 0.8 V CTL DC High, V =2.0 to V V CTL DD DC Notes: 1. All measurements based on the 50MHz to 850MHz Application Circuit, T=25C 2. V =V =+5V, V =0/5V CC DD CTL 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 11 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS101202

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