RFCA1008 5MHz to 1000MHz, Push-Pull, High Linearity InGaP HBT Amplifier Package Style: SOIC-8 8 1 Features 5V Single Supply Excellent Linearity 2 7 Performance at +34dBmV Output Power per Tone Two Amplifiers in Each SOIC-8 3 6 Package Simplify Push-Pull Configuration PC Board Layout Available in Lead-free, RoHS 4 5 Compliant, and Green Packaging SOIC-8 Package Functional Block Diagram Applications Product Description CATV Head End Driver and Predriver Amplifier RFMD s RFCA1008 is a high performance InGaP HBT MMIC amplifier designed with the InGaP process technology for excellent reliablility. The heterojunction increases CATV Line Driver Amplifier breakdown voltage and minimizes leakage current between junctions. A Darlington configuration is utilized for broadband performance. The RFCA1008 contains two amplifiers for use in wideband push-pull CATV amplifiers requiring excellent second order performance the second and third order non-linearities are greatly improved in the push-pull configuration. Ordering Information RFCA1008SQ 25 Piece sample bag RFCA1008SR 7 Sample reel with 100 pieces RFCA1008TR13 13 Reel with 2500 pieces RFCA1008PCK-410 50MHz to 1000MHz, PCBA with 5-piece sample bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT SOI RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2012, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS130627 support, contact RFMD at ((+1) 336-678-5570 or ccustomerservice rfmd.com. 1 of 23RFCA1008 Absolute Maximum Ratings Parameter Rating Unit Max Device Current (I)300 mA D Max Device Voltage (V)6 V D Max RF Input Power 18 dBm Max Junction Temp (T ) 150 C J Operating Temperature Range (T ) -40 to +85 C L Storage Temperature -40 to +150 C Notes: 1. Operation of this device beyond any one of these limits may cause per- manent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the Absolute Maximum Ratings table above. 2. Bias Conditions should also satisfy the following expression: I V < (T - T )/R , j - l and T = T D D J L TH L LEAD Nominal Operating Parameters Specification Parameter Unit Condition Min. Typ. Max. 17dB Application, V = 5V, I = 215mA CC CC Frequency Range 50 1000 MHz Small Signal Gain 16.8 dB 50MHz 5V, 25C 17.4 dB 500MHz 5V, 25C 17.9 dB 1000MHz 5V, 25C Gain Flatness 0.5 dB 50MHz to 1000MHz per ANSI/SCTE-144 2007 Output IP3 40 dBm 550MHz, Tone Spacing = 6MHz, P per OUT Tone = +5dBm Output IP2 Plus 65 dBm 550MHz, Tone Spacing = 30MHz P per OUT Tone = 0dB Output IP2 Minus 70 dBm P1dB 23 dBm 500MHz Input Return Loss 27 dB Output Return Loss 16 dB Noise Figure (Balun Insertion Loss 4.0 dB 50MHz to 1000MHz Included) CSO 80 dBc 79 Channel, Flat Tilt, +34dBmV CTB 76 dBc XMOD 69 dBc Device Operating Voltage 5.0 V Device Operating Current 215 mA V = 5V CC Thermal Resistance 40 C/W Junction to backside PCB under IC Note: V = 5V, I = 215mA, T = 25C, Z = Z = 75 , Push Pull Application Circuit CC C L S L 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 23 support, contact RFMD at ((+1) 336-678-5570 or ccustomerservice rfmd.com. DS130627