X-On Electronics has gained recognition as a prominent supplier of RF5722TR7 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. RF5722TR7 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

RF5722TR7 Qorvo

RF5722TR7 electronic component of Qorvo
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Part No.RF5722TR7
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 2.4- 2.5 GHz 18dBm, 25.5dB
Datasheet: RF5722TR7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.8711
250 : USD 1.3734
500 : USD 1.1631
1000 : USD 0.9814
2500 : USD 0.8202
5000 : USD 0.7245
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Development Kit
Input Return Loss
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RF5722TR7 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RF5722TR7 and other electronic components in the RF Amplifier category and beyond.

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RF5722 3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.45mm 8 7 Features RF IN 1 6 VC2 Single Power Supply 3.0V to Input Interstage Match Match 3.6V 2Fo Filter 24dB Minimum Gain Input Matched to 50 Power 2 5 VREG RF OUT Detector Bias Circuit 2400MHz to 2500MHz Fre- quency Range +18dBm at <2.5% typ EVM, 3 4 120mA at 3.3V CC Applications IEEE802.11b/g/n WiFi Appli- cations Functional Block Diagram 2.5GHz ISM Band Applica- tions Product Description Commercial and Consumer The RF5722 is a linear, medium-power, high-efficiency, two-stage amplifier IC Systems designed specifically for battery-powered WiFi applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Portable Battery-Powered InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has Equipment been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread- Spread-Spectrum and MMDS spectrum transmitters. The device is provided in a 2.2mmx2.2mm, 8-pin, QFN with Systems a backside ground. The RF5722 is designed to maintain linearity over a wide range of supply voltages and power outputs. The RF5722 also has built-in power detector and incorporates the input, and interstage components internally which reduces the component count used externally and makes it easier to incorporate on any design. Ordering Information RF5722 Standard 25 piece bag RF5722SR Standard 100 piece reel RF5722TR7 Standard 2500 piece reel RF5722PCK-410 Fully assembled evaluation board tuned for 2.4GHz to 2.5GHz and 5 loose sample pieces Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS RF MEMS InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110619 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 10 PDETECT VCC NC VC1RF5722 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Supply Voltage -0.5 to +5.0 V Exceeding any one or a combination of the Absolute Maximum Rating conditions may DC cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Power Control Voltage (V ) -0.5 to 3.5 V REG mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. DC Supply Current 400 mA RoHS status based on EUDirective2002/95/EC (at time of this document revision). Input RF Power +5 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Operating Ambient Temperature -30 to +85 C infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Degraded Performance -30 to -10 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Storage Temperature -40 to +150 C Moisture Sensitivity TBD ESD HBM TBD V MM TBD V Specification Parameter Unit Condition Min. Typ. Max. Temperature=+25C, V =3.3V, CC V =2.85V pulsed at 1% to 100% duty cycle, REG Overall Frequency=2450MHz, circuit per evaluation board schematic, unless otherwise specified 2.40 2.50 GHz IEEE802.11g Frequency IEEE802.11n Output Power 17 18 dBm At max data rate, OFDM modulation EVM* 2.5 4 % RMS, mean Gain 24 25.5 dB At +18dBm RF P and 54Mbps OUT Gain Variance 1.25 dB -30C to +85C Power Detector P =18dBm 0.85 1.25 V OUT Current Operating 120 160 mA At +18dBm RF P and 54Mbps OUT 11b Operating 175 mA At +20dBm and 1Mbps Quiescent 85 mA Data rate at <3.5% EVM RMS, mean, T=-30C to +50C I Current 2 mA V =+3.3V REG CC DC Shutdown 10 A Power Supply 3.0 3.3 3.6 V Operating Range DC V , V Input Voltage 2.75 2.85 2.9 V Operating Range REG1 REG2 DC Output VSWR 10:1 Input Return Loss -15 -10 dB Turn-on Time** 0.5 1.0 S Output stable to within 90% of final gain Second Harmonic -43 dBm Fundamental frequency is between 2400MHz and 2500MHz RF P =+18dBm. See note 2. OUT ACP Lower -53 -50 18.5dBm (min), -20dBm (typ.) ACP Upper -33 -30 18.5dBm (min), -20dBm (typ.) Notes: *The EVM specification is obtained with a signal generator that has an EVM floor of less than 0.7%. **The PA must operate with gated bias voltage input at 1% to 99% duty cycles without any EVM or other parameter degradation. Note 2: For best harmonic rejection please refer to the harmonic rejection application schematic. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 10 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110619

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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