RF3183 QUAD-BAND/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module (5mmx5mmx1mm) DCS RFIN DCS RFOUT 1 10 BAND SEL 2 Features TX EN 3 Typical GMSK Efficiency GSM850/900 48/53% Integrated Power VBATT 4 DCS/PCS 50/53% Control Auto V Tracking Circuit avoids BATT GND 5 Switching Transients at Low Supply Voltage VRAMP 6 Integrated Power Flattening Circuit Reduces Power and GSM RFIN GSM RFOUT 7 9 Current into Mismatch Integrated V Rejection Filter RAMP GND 8 Eliminates External Components Applications Functional Block Diagram Quad-Band GSM Handsets Product Description GSM Transmitter Line-ups The RF3183 is a high power amplifier module with integrated power control. The input and out- Portable Battery-Powered put terminals are internally matched to 50 . The amplifier devices are manufactured on an Equipment advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The module is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile transmit GSM850/EGSM900/DCS/ lineup operating in the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands PCS Products (such as a cellular handset). Band selection is controlled by an input on the module which selects either the low or high band. The device is packaged on a 5mmx5mm laminate module GPRS Class 12 Compatible with a protective plastic over-mold. The RF3183 features RFMDs latest integrated power flat- Products tening circuit, which significantly reduces current and power variation into load mismatch. The RF3183 provides excellent ESD protection at all the pins. The RF3183 also provides integrated Mobile EDGE/GPRS Data V rejection filter which improves noise performance and transient spectrum. RAMP Products Ordering Information RF3183Quad-Band/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module RF3183 Quad-Band/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module Power Amplifier Module, 5 Piece Sample Pack RF3183PCBA-41X Fully Assembled Evaluation Board Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS RF MEMS InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS100412 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 20RF3183 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Supply Voltage (V ) -0.5 to +6.0 V Exceeding any one or a combination of the Absolute Maximum Rating conditions may BATT cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Power Control Voltage (V ) -0.5 to +3.0 V RAMP mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Band Select 3.0 V RoHS status based on EUDirective2002/95/EC (at time of this document revision). TX Enable 3.0 V The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any RF - Input Power 10.0 dBm infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Max Duty Cycle 50 % RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Output Load VSWR 10:1 Operating Temperature -30 to +85 C Storage Temperature -55 to +150 C Specification Parameter Unit Condition Min. Typ. Max. Recommended Operating Conditions V RAMP V Input Current 40 AV =V RAMP RAMP RAMP,MAX V =V 2.2 V RAMP RAMP, MAX V =V 0.25 V RAMP RAMP, MIN Band Select Switch BAND SEL HIGH 1.5 V High Band (DCS1800/PCS1900) Low Band (GSM850/EGSM900) BAND SEL LOW 0 0.7 V BAND SEL Input Current 1 +10 uA TX EN TX EN HIGH 1.5 V PA ON PA OFF TX EN LOW 0 0.7 V TX EN Input Current 1 +10 uA Overall Power Supply V Range 3.0 3.6 4.5 V BATT Off Current 10 uA TX EN Low RF Impedance LB RF IN 50 LB RF OUT 50 HB RF IN 50 HB RF OUT 50 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 20 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS100412