RF5110G 3V General Purpose/GSM Power Amplifier Product Overview The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured with an advanced GaAs HBT process. It is designed for use as the final RF amplifier in GSM hand-held equipment in 900 MHz band, and General-Purpose radio application in standard sub-bands from 150 MHz to 960 MHz. An analog on-board 16 Pad 3x3mm QFN Package power controller provides over 70 dB range of adjustment. Which allows for power down with a voltage equals to the logic Low to set the device in standby mode. The Key Features RF5110G RF Input is internally matched to 50 . On its RF General Purpose: Output, it can be easily matched externally to obtain optimum power and efficiency for certain applications. Single 2.8 V to 3.6 V Supply +32 dBm Output Power 53% Efficiency 150 MHz to 960 MHz Operation GSM: Single 2.7 V to 4.8 V Supply +36 dBm Output Power at 3.6 V 32 dB Gain with Analog Gain Control 57% Efficiency 800 MHz to 950 MHz Operation Supports GSM and E-GSM Functional Block Diagram Applications FM Radio Applications 150 MHz/220 MHz/450 MHz 865 MHz to 928 MHz 3 V GSM Cellular Handsets GPRS Compatible Ordering Information Top View Part No. Description RF5110GTR7 2,500 pieces on a 7 reel (standard) RF5110GPCK-410 GSM900 Fully Tested Evaluation Board Datasheet, Rev. F, December 22, 2020 Subject to change without notice 1 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55C to +150C +3.5 Device Voltage (1) Device Voltage (VCC, VCC1, VCC2) -0.5 V to +6.0 V +2.7 +4.8 V (VCC, VCC1, VCC2) (1)(2) Control Voltage (VAPC1, VAPC2) -0.5 V to +3.0 V +5.5 V Device Current (I I I ) 2400 mA T 40 +85 C CC, CC1, CC2 CASE RF Input Power +13 dBm T +150 C J Duty Cycle at Max Power 50% Note: 1. P < +35 dBm OUT Exceeding any one or a combination of the Absolute Maximum Rating 2. With maximum output load VSWR 6:1 conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may Electrical specifications are measured at specified test conditions. reduce device reliability. This rating specified for GSM operation. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Output Power 32 dBm Gain 150 MHz 31.5 dB Efficiency 53 % Output Power 32 dBm Gain 220 MHz 32 dB Efficiency 52 % Output Power 32 dBm Gain 450 MHz VCC, VCC1 and VCC2 = 3.0 V 32.5 dB Efficiency 50.5 % Output Power 32 dBm 865 MHz to 928 MHz Gain 33.0 29.5 dB Equals typical at respective frequency corner Efficiency 49 % Notes: 1. Test conditions unless otherwise noted: V and V =2.8 V V , V and V =3.3 V Duty Cycle = 100% Temp=+25C 50 system APC1 APC2 CC CC1 CC2 Refer to application circuits Datasheet, Rev. F, December 22, 2020 Subject to change without notice 2 of 16 www.qorvo.com