X-On Electronics has gained recognition as a prominent supplier of RF5616TR7 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. RF5616TR7 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

RF5616TR7 Qorvo

RF5616TR7 electronic component of Qorvo
RF5616TR7 Qorvo
RF5616TR7 RF Amplifier
RF5616TR7  Semiconductors

Images are for reference only
See Product Specifications
Part No. RF5616TR7
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 4.9- 5.85 GHz 21 dBm, 29 dB
Datasheet: RF5616TR7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 5.5684
250 : USD 2.0392
500 : USD 1.8091
1000 : USD 1.5476
2500 : USD 1.2758
5000 : USD 1.0771
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Development Kit
Input Return Loss
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Factory Pack Quantity :
Subcategory
Cnhts
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Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RF5616TR7 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RF5616TR7 and other electronic components in the RF Amplifier category and beyond.

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RF5616 3.0V TO 5.0V, 5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm 16 15 14 13 Features NC 1 12 NC Single Supply Voltage 3.0V to 5.0V NC 2 11 NC Two Mode Operation Input Interstage Interstage Match Match Match 29dB Typical Gain Across RF IN 3 10 RF OUT Band P :18dBmat 3.3V Typ. OUT NC 4 9 PDET Bias P : 21dBm at 5V Typ. OUT Integrated Second and Third Harmonic Filter 5 6 7 8 Applications Functional Block Diagram IEEE802.11a/n and IEEE802.16e Applications Product Description HyperLAN The RF5616 is a linear, medium-power, high-efficiency power amplifier IC WiFi Systems designed specifically for battery-powered WiFi applications such as PC Commercial and Consumer cards, mini PCI, and compact flash applications. It is also designed to Systems meet IEEE802.11a, IEEE802.11n, IEEE802.16e (4.9GHz to 5.850GHz Portable Battery-Powered only) WiMax, FCC, and ETSI requirements for operation in the 4.9GHz to Equipment 5.850GHz band. The device is manufactured on an advanced InGaP GaAs Heterojunction Bipolar Transistor process, and has been designed for use Spread-Spectrum and MMDS as the final RF amplifier in 5GHz WiFi and other spread-spectrum trans- Systems mitters. The device is provided in a QFN, 16-pin, 3mmx3mmx0.45mm, leadless chip carrier with backside ground. The RF5616 operates from a single supply and will be easily incorporated into WiFi and other designs with minimal external components. Ordering Information RF5616SQ Standard 25 piece bag RF5616SR Standard 100 piece reel RF5616TR7 Standard 2500 piece reel RF5616PCK-410 Fully Assembled Evaluation Board with 5-piece Loose Sample Bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS130516 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 13 VREG VMODE VCC1 NC VCC2 NC NC VCC3RF5616 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Supply Voltage, RF applied -0.5 to +5.25 V Rating conditions to the device may reduce device reliability. Specified typical perfor- DC mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Supply Voltage, no RF applied -0.5 to +6.0 V DC The information in this publication is believed to be accurate and reliable. However, no Power Control Voltage (V ) -0.5 to 3.5 V REG responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of DC Supply Current 400 mA RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Input RF Power (50 load) +5 dBm Operating Ambient Temperature -40 to +85 C RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric Storage Temperature -40 to +150 C materials and red phosphorus as a flame retardant, and <2% antimony in solder. Moisture sensitivity JEDEC Level 1 Nominal Operating Parameters Specification Parameter Unit Condition Min. Typ. Max. T=+25C V =3.3V and 5.0V V =2.85V CC REG pulsed at 1% to 100% duty cycle Freq=4.9GHz Compliance to 5.85GHz unless otherwise noted. IEEE802.11a IEEE802.11n IEEE802.16e (4.9GHz to 5.85GHz) Frequency Range 4.9 5.85 MHz Lower, middle, upper U-NII Output Power (Mode1) 17 18 dBm V =3.3V, V =Low, using a standard CC MODE IEEE802.11a waveform, 54 Mbps, 64QAM EVM 3 4 % RMS, mean at rated P , V =3.3V, OUT CC V =2.85V and temperature= -40C to +85C REG Output Power (Mode1) 19 20 dBm V =5.0V, V =Low, using a standard CC MODE IEEE802.11a waveform, 54Mbps, 64QAM, 4.9GHz to 5.15 GHz EVM 3 4 % RMS, mean at rated P , V =5.0V, OUT CC V =2.85V and temperature= -40C to +85C, REG 4.9GHz to 5.15 GHz Output Power (Mode1) 20 21 dBm V =5.0V, V =Low, using a standard CC MODE IEEE802.11a waveform, 54Mbps, 64QAM, 5.15GHz to 5.85 GHz EVM 3 4 % RMS, mean at rated P , V =5.0V, OUT CC V =2.85V and temperature= -40C to +85C, REG 5.15GHz to 5.85 GHz Large Signal Gain At rated P OUT 25 29 dB 4.9GHz to 5.15GHz 27 30 dB 5.15GHz to 5.85GHz Gain Variation 2.5 dB 4.9GHz to 5.85GHz, -40C to +85C Power Detector P at 8dBm 0.3 0.4 0.5 V Over full frequency range, -40C to +85C, OUT V =ON, and over full V range CC REG P at 21dBm 0.85 1.0 1.2 V Over full frequency range, -40C to +85C, OUT V =ON, and over full V range CC REG Input Return Loss -15 -7.0 dB 4.9GHz to 5.1GHz -15 -9.0 dB 5.1GHz to 5.85GHz Turn On/OFF 0.5 1.0 S Output stable to within 90% of the final gain Output VSWR 4:1 Stable and no spurs above -47dBm/MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 13 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS130516

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