RFMD + TriQuint = Qorvo RFPA5512 RFPA5512 WiFi Integrated PA Module 4.9GHz to 5.85GHz Package: QFN, 20-pin, 4.0mm x 4.0mm x 0.9mm The RFPA5512 is a three-stage power amplifier (PA) designed for 802.11a/n/ac applications. The integrated input and output 50 match Features greatly reduces the layout area, bill of materials and manufacturability P = 23dBm, 5V, 11ac, 80MHz OUT cost in the customer application. The RFPA5512 is manufactured on an MCS9 1.8% EVM advanced InGaP heterojunction bipolar transistor (HBT) process and is Pout = 25dBm, 5V, 11n, 20/40 capable of achieving linear powers up to 23dBm with an EVM <1.8% MHz, MCS7 3% while maintaining excellent power added efficiency. The device is Typical Gain = 33dB provided in a 4.0mm x 4.0mm x 0.9mm QFN package that meets or High PAE exceeds the power requirements of IEEE802.11a/n/ac WiFi RF systems. Input and Output Matched to 50 Integrated Power Detector, VCC1VCC2 VCC3 GND GND Harmonic filter, and notch filter 20 19 18 17 16 GND NC 1 15 Applications GND GND 2 14 Customer Premise Equipment (CPE) RFIN RFOUT 3 13 Wireless Access Points, Gateways GND 4 12 GND Routers BIAS Set-Top Box Applications VREF GND 5 11 CIRCUIT Picocell/Femtocell 6 7 8 9 10 RC1 RC2 NC NC PDET Functional Block Diagram Ordering Information RFPA5512SB Standard 5-piece Sample Bag RFPA5512SQ Standard 25-piece Sample Bag RFPA5512SR Standard 100-piece Reel RFPA5512TR13 Standard 2500-piece Reel RFPA5512PCK-410 Fully Assembled Eval Board w/5-piece bag Revision DS20151103 1 of 8 Disclaimer: Subject to change without notice 2015 RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com RFPA5512 RFPA5512 RFMD + TriQuint = Qorvo Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit DC Supply Voltage -0.5 to +6 V DC DC Supply Current 1000 mA RFMD Green: RoHS status based on EU Operating Temperature Range -40 to +85 C Directive 2011/65/EU (at time of this Storage Temperature -40 to +150 C document revision), halogen free per IEC 61249-2-21, < 1000ppm each of Maximum TX Input Power into 50 for 11a/n/ac (No Damage). +10 dBm antimony trioxide in polymeric materials *R1=0 and red phosphorus as a flame retardant, Maximum TX Input Power 10:1 VSWR for 11a/n/ac (No Damage). and <2% antimony in solder. +15 dBm *R1=15 Exceeding any one or a combination of the Absolute Junction Temperature +160 C Maximum Rating conditions may cause permanent Moisture Sensitivity Level (260C JEDEC J-STD-020) MSL2 damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce *Note: For R1 placement please refer to the applications schematic device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. This is an InGaP PA designed for high duty cycle applications with o Tj>100 C. Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max Compliance IEEE802.11a/n/ac Operating Frequency 5.180 5.925 GHz Extended Operating Frequency 4.900 5.180 GHz Power Supply V 4.75 5.00 5.25 V CC Power Supply V 2.85 2.90 2.95 V REF T= +25C, VCC=5.0V, VREF = 2.90V, Over Operating Frequency Range, Unless Otherwise Noted IEEE802.11ac 80MHz Output 22 23 dBm Power MCS9, 256QAM 1.8 % 1.5 IEEE802.11ac 80MHz EVM -36.5 -35 dB IEEE802.11n 20/40MHz Output 23.5 25 dBm Power MCS7, 64QAM 3 % 2.5 IEEE802.11n 40MHz EVM -32.0 -30.5 dB Large Signal Gain 31 33 dB Gain Variation over Temp -2.0 +2.0 dB Over Any 100MHz Frequency band 5 0 dB P =25dBm MCS0 80MHz OUT Margin to Spectral Mask 5 0 dB P =26dBm MCS0 40MHz OUT 5 0 dB P =27dBm MCS0 20MHz, 11a 6Mbps OUT 275 325 mA P =23dBm OUT Operating Current 375 420 mA P =27dBm OUT Quiescent Current 140 mA V Current 12 mA REF Leakage Current 100 250 nA RF OFF V = 0V REF Second Harmonic -45 -40 dBm/ MHz P = 27dB Over Operating Frequency band. OUT Third Harmonic -50 -45 dBm/ MHz OOB Rejection -5 dB Gain (S21) 3.3 3.8GHz 7 dB Gain ( S21) 7.0 GHz Revision DS20151103 Disclaimer: Subject to change without notice 2 of 8 2015 RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com