RFPP2590 RFPP2590 GaAs Push Pull Hybrid 45MHz to 1200MHz Package: SOT-115J The RFPP2590 is a Hybrid Push Pull amplifier module. The part employs GaAs die and operates from 45MHz to Features 1200MHz. It provides excellent linearity and superior return Excellent Linearity loss performance with low noise and optimal reliability. Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Low Noise Unconditionally Stable Under All Terminations 22.5dB Min. Gain at 1200MHz 240mA Max. at 24V DC Applications 45MHz to 1200MHz CATV Amplifier Systems Ordering Information RFPP2590 Box with 50 Pieces Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit RF Input Voltage (single tone) 75 dBmV DC Supply Over-Voltage (5 minutes) 30 V RoHS (Restriction of Hazardous Storage Temperature -40 to +100 C Substances): Compliant per EU Directive 2011/65/EU. Operating Mounting Base Temperature -30 to +100 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140219 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 1 of 3 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. RFPP2590 Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max General Performance V+ = 24V T = 30C Z = Z = 75 MB S L 21.5 22 22.5 dB f = 45MHz Power Gain 22.5 23.5 24.0 dB f = 1200MHz 1 Slope 1.0 1.5 2.0 dB f = 45MHz to 1200MHz Flatness of Frequency Response 0.8 dB f = 45MHz to 1200MHz Input Return Loss -20 dB f = 45MHz to 320MHz -19 dB f = 320MHz to 640MHz -18 dB f = 640MHz to 870MHz -18 dB f = 870MHz to 1000MHz -17 dB f = 1000MHz to 1200MHz Output Return Loss -20 dB f = 45MHz to 320MHz -19 dB f = 320MHz to 640MHz -18 dB f = 640MHz to 870MHz -17 dB f = 870MHz to 1000MHz -16 dB f = 1000MHz to 1200MHz Noise Figure 5.5 6.5 dB f = 50MHz to 1200MHz Total Current Consumption (DC) 230.0 240.0 mA Distortion Data 40MHz to 550MHz V+ = 24V T = 30C Z = Z = 75 MB S L CTB -64 -60 dBc XMOD -60 -56 dBc 79 ch. flat, V = 44dBmV at 550MHz, plus 75 digital channels (-6dB O 2 offset) CSO -70 -65 dBc CIN 62 66 dB 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +44dBmV flat output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140219 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3