RFPA3800 RFPA3800 GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features 5W Output Power (P1dB) High Linearity: OIP3>48dBm High Efficiency Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation Thermally Enhanced Slug Package Applications GaAs Driver for Base Station Functional Block Diagram Amplifiers PA Stage for Commercial Product Description Wireless Infrastructure The RFPA3800 is a single-stage GaAs HBT power amplifier specifically designed for Final Stage PA in Femtocell and high power, high efficiency applications. It is also well-suited for Wireless Infrastruc- Repeater Applications ture linear power amplifier applications. The RFPA3800 can be optimized for linear or saturated operation by varying the quiescent bias point and load line. It also Final Stage PA in High Efficiency, High Power Applications offers low noise figure making it an excellent solution for 2nd and 3rd stage LNAs. The RFPA3800 exhibits excellent thermal performance through the use of a ther- Class AB Operation for LTE and mally-enhanced plastic surface-mount slug package. GSM Transceiver Applications Ordering Information RFPA3800SQ Sample bag with 25 pieces RFPA3800SR 7 Reel with 100 pieces RFPA3800TR7 7 Reel with 750 pieces RFPA3800TR13 13 Reel with 2500 pieces RFPA3800PCK-410 450MHz to 470MHz PCBA with 5-piece Sample Bag RFPA3800PCK-411 920MHz to 960MHz PCBA with 5-piece Sample Bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2012, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS140819 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 12RFPA3800 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Supply Voltage (V and V ) >300MHz 7.5 V CC BIAS Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Supply Voltage (V and V ) <300MHz 5.5 V CC BIAS tions is not implied. The information in this publication is believed to be accurate and reliable. However, no Reference Current (I)10mA REF responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No DC Supply Current (I ) 2300 mA C license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- CW Input Power, 2:1 Output VSWR 28 dBm cation circuitry and specifications at any time without prior notice. CW Input Power, 5:1 Output VSWR 20 dBm RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric Output Load VSWR at P3db 5:1 materials and red phosphorus as a flame retardant, and <2% antimony in solder. Operating Junction Temperature 160 C Operating Temperature Range (T ) -40 to +85 C L Storage Temperature -55 to +150 C ESD Rating: Human Body Model Class 1B Moisture Sensitvity Level MSL 2 Specification Parameter Unit Condition Min. Typ. Max. 460MHz V =7.0V, V =7.0V, I =650mA CC BIAS CQ Frequency 450 460 470 MHz EVB tuned for linear operation Input Power (P)23dBmV <7.5V, load VSWR<2:1 IN CC Gain (S21) 18 dB OIP3 48 dBm 20dBm/tone, tone spacing=1MHz P1dB 36.7 dBm EVB tuned for linear operation Efficiency at P3dB 50 % At P3dB, EVB tuned for linear operation Input Return Loss (S11) 15 dB Output Return Loss (S22) 9 dB Noise Figure 5 dB WCDMA Ch Power at -65dBc ACPR 19.5 dBm 3GPP 3.5, Test Model 1, 64 DPCH WCDMA Ch Power at -55dBc ACPR 24.5 dBm 3GPP 3.5, Test Model 1, 64 DPCH V =7.0V, V =7.0V, I =650mA 945MHz CC BIAS CQ Frequency 920 940 960 MHz EVB tuned for linear operation Input Power (P)26dBmV <7.5V, load VSWR<2:1 IN CC Gain (S21) 15 dB 945MHz OIP3 49 dBm 20dBm/tone, tone spacing=1MHz P1dB 36 dBm EVB tuned for linear operation Efficiency at P3dB 45 % At P3dB, EVB tuned for linear operation Input Return Loss (S11) 12 dB Output Return Loss (S22) 11 dB Noise Figure 3.2 dB WCDMA Ch Power at -65dBc ACPR 19.3 dBm 3GPP 3.5, Test Model 1, 64 DPCH WCDMA Ch Power at -55dBc ACPR 23.7 dBm 3GPP 3.5, Test Model 1, 64 DPCH Power Supply Operating Current (Quiescent) 500 650 700 mA At V =7.0V CC Operating Voltage (V ) 7.0 7.5 V Max recommended collector voltage CC Thermal Resistance (R ) 11.5 C/W At quiescent current, no RF TH Power Down Current 20 AAt V =0V. REF 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 12 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. DS140819