TGA4548
17 - 20 GHz 10 W GaN Power Amplifier
Product Overview
Qorvos TGA4548 is a high frequency, high power MMIC
amplifier fabricated on Qorvos production 0.15um GaN on
SiC process (QGaN15). The TGA4548 operates from 17
20 GHz and typically provides 10 W saturated output power
with power-added efficiency of 30% and large-signal gain
of 22 dB. This combination of high frequency performance
provides the flexibility designers are looking for to improve
2.95 x 2.80 x .10 mm Die Size
system performance while reducing size and cost. The
TGA4548 also has an integrated power detector to support
system diagnostics and other needs.
Key Features
The TGA4548 is matched to 50 with integrated DC
Frequency Range:17 20 GHz
blocking capacitors on both RF I/O ports simplifying system
Power:40dBm Psat
integration. The frequency coverage and operational
Small Signal Gain:27dB
flexibility allows it support satellite communication as well
as point to point data links. Large Signal Gain: 22 dB
Integrated Power Detector
The TGA4548 is 100% DC and RF tested on-wafer to
PAE: 30% at PIN = 12 dBm
ensure compliance to electrical specifications.
Bias: VD1= VD2 = VD3 =+28V, ID1 + ID2 + ID3 =
300mA
Lead-free and RoHS compliant.
Chip Dimensions: 2.95 x 2.80 x 0.10 mm
Evaluation boards are available upon request.
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
Point-to-Point Radio
Satellite Communications
Ordering Information
Part No. ECCN Description
TGA4548 3A001.b.2.c Waffle tray with 25 pcs
TGA4548S2 Sample waffle tray with 2 pcs
TGA4548EVB Evaluation board
Data Sheet Rev. A, November 18, 2016 | Subject to change without notice 1 of 11 www.qorvo.com
TGA4548
17 20 GHz 10 W GaN Power Amplifier
Absolute Maximum Ratings Recommended Operating Conditions
Parameter Rating Parameter Min Typ Max Units
Drain Voltage (VD) 29.5 V Drain Voltage (VD) +28 V
Gate Voltage Range (VG) -8 to 0 V Operating Temp. Range 40 +25 +85 C
RF Input Power, CW, 50, T=25C 26 dBm I 300 mA
DQ
Dissipated Power (P ), CW, 85C 43 W V -2.6 V
DISS G
Storage Temperature 55 to +150C I drive (at +38dBm Pout) 930 mA
D
Mounting Temperature (30 seconds) 320C Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
Channel Temperature (TCH) 275C
conditions.
Drain Current (ID1), Top or Bottom 500 mA
Drain Current (ID2), Top or Bottom 500 mA
Drain Current (I ), Top and Bottom 2 A
D3
Forward Gate Current (I ), Top or Bottom 3 mA
G1
Forward Gate Current (I ), Top or Bottom 12 mA
G2
Forward Gate Current (IG3), Top and Bottom 48 mA
Reference Power Detect (Iref) 4 mA
Power Detect Diode (Idet) 4 mA
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Electrical Specifications
(1)
Parameter Conditions Min Typ Max Units
Operational Frequency Range 17 20 GHz
Small Signal Gain 27 dB
Input Return Loss 15 dB
Output Return Loss 12 dB
Output Power at Saturation, Psat 40 dBm
Power Added Efficiency, PAE 30 %
Third Order Intermodulation, IM3 Pout = +34 dBm/tone -25 dBc
Gain Temperature Coefficient Tdiff = (85 (-40)) C -0.061 dB/C
Power Temperature Coefficient Tdiff = (85 (-40)) C, Pin = +5 dBm -0.044 dBm/C
Notes:
1. Test conditions unless otherwise noted: VD1=VD2=VD3=28V, ID1+ID2=ID3=300mA, VG1=VG2=VG3=-2.6V typical, Temp=+25C,
Z0=50
Data Sheet Rev. A, November 18, 2016 | Subject to change without notice 2 of 11 www.qorvo.com