RFGA2012SR Qorvo

TGA4548 17 - 20 GHz 10 W GaN Power Amplifier Product Overview Qorvos TGA4548 is a high frequency, high power MMIC amplifier fabricated on Qorvos production 0.15um GaN on SiC process (QGaN15). The TGA4548 operates from 17 20 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 22 dB. This combination of high frequency performance provides the flexibility designers are looking for to improve 2.95 x 2.80 x .10 mm Die Size system performance while reducing size and cost. The TGA4548 also has an integrated power detector to support system diagnostics and other needs. Key Features The TGA4548 is matched to 50 with integrated DC Frequency Range:17 20 GHz blocking capacitors on both RF I/O ports simplifying system Power:40dBm Psat integration. The frequency coverage and operational Small Signal Gain:27dB flexibility allows it support satellite communication as well as point to point data links. Large Signal Gain: 22 dB Integrated Power Detector The TGA4548 is 100% DC and RF tested on-wafer to PAE: 30% at PIN = 12 dBm ensure compliance to electrical specifications. Bias: VD1= VD2 = VD3 =+28V, ID1 + ID2 + ID3 = 300mA Lead-free and RoHS compliant. Chip Dimensions: 2.95 x 2.80 x 0.10 mm Evaluation boards are available upon request. Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Point-to-Point Radio Satellite Communications Ordering Information Part No. ECCN Description TGA4548 3A001.b.2.c Waffle tray with 25 pcs TGA4548S2 Sample waffle tray with 2 pcs TGA4548EVB Evaluation board Data Sheet Rev. A, November 18, 2016 | Subject to change without notice 1 of 11 www.qorvo.com TGA4548 17 20 GHz 10 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Drain Voltage (VD) 29.5 V Drain Voltage (VD) +28 V Gate Voltage Range (VG) -8 to 0 V Operating Temp. Range 40 +25 +85 C RF Input Power, CW, 50, T=25C 26 dBm I 300 mA DQ Dissipated Power (P ), CW, 85C 43 W V -2.6 V DISS G Storage Temperature 55 to +150C I drive (at +38dBm Pout) 930 mA D Mounting Temperature (30 seconds) 320C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating Channel Temperature (TCH) 275C conditions. Drain Current (ID1), Top or Bottom 500 mA Drain Current (ID2), Top or Bottom 500 mA Drain Current (I ), Top and Bottom 2 A D3 Forward Gate Current (I ), Top or Bottom 3 mA G1 Forward Gate Current (I ), Top or Bottom 12 mA G2 Forward Gate Current (IG3), Top and Bottom 48 mA Reference Power Detect (Iref) 4 mA Power Detect Diode (Idet) 4 mA Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 17 20 GHz Small Signal Gain 27 dB Input Return Loss 15 dB Output Return Loss 12 dB Output Power at Saturation, Psat 40 dBm Power Added Efficiency, PAE 30 % Third Order Intermodulation, IM3 Pout = +34 dBm/tone -25 dBc Gain Temperature Coefficient Tdiff = (85 (-40)) C -0.061 dB/C Power Temperature Coefficient Tdiff = (85 (-40)) C, Pin = +5 dBm -0.044 dBm/C Notes: 1. Test conditions unless otherwise noted: VD1=VD2=VD3=28V, ID1+ID2=ID3=300mA, VG1=VG2=VG3=-2.6V typical, Temp=+25C, Z0=50 Data Sheet Rev. A, November 18, 2016 | Subject to change without notice 2 of 11 www.qorvo.com