RFMD2081 RFMD2081 45MHz TO 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO Package: QFN, 32-Pin, 5mm x 5mm Features RF Output Frequency Range 45MHz to 2700MHz Phase Fractional-N Synthesizer with Synth det. Very Low Spurious Levels Typical Step Size 1.5Hz Fully Integrated Wideband VCOs and LO Buffers Ref. Integrated Phase Noise divider <0.2 rms at 1GHz -40dBc Unadjusted Carrier Suppression -40dBc Unadjusted Sideband Functional Block Diagram Suppression Product Description 100MHz Baseband Input 3dB Bandwidth The RFMD2081 is a low power, wideband, IQ modulator with integrated fractional-N synthesizer and voltage controlled oscillator (VCO). The modulator features an input 3dB bandwidth of Very Low Noise Floor 100MHz, and can generate output frequencies of between 45MHz and 2700MHz, making it -162dBm/Hz Typical suitable for a wide range of applications. Output P1dB + 4dBm The fractional-N synthesizer takes advantage of an advanced sigma-delta architecture that delivers ultra-fine step sizes and low spurious products. The synthesizer/VCO, combined with Output IP3 + 17dBm an external loop filter, allows the user to generate local oscillator (LO) signals from 90MHz to 5400MHz. The LO signal is buffered and routed to a high accuracy quadrature divider (/2) that 2.7V to 3.3V Power Supply drives the balanced I and Q mixers. The output of the mixers are summed and applied to a dif- 135mA Typical Current ferential RF output stage. This device also features a differential input for an external VCO or LO Consumption source. Serial Programming Interface Device programming is achieved via a simple 3-wire serial interface. In addition, a unique pro- gramming mode allows up to four devices to be controlled from a common serial bus. This elim- inates the need for separate chip-select control lines between each device and the host Applications controller. Up to six general purpose outputs are provided, which can be used to access internal signals (the LOCK signal, for example) or to control front end components. The device is opti- Satellite Communications mized for low power operation, consuming typically only 135mA from a 3V supply. QPSK/QAM Modulators Wireless Broadband Point-to-Point Software Defined Radios Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS RF MEMS InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2011, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS140110 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 18RFMD2081 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Supply Voltage (V ) -0.5 to +3.6 V DD Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Input Voltage (V ), any pin -0.3 to V +0.3 V IN DD tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any LO Input Power +15 dBm infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Operating Temperature Range -40 to +85 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Storage Temperature Range -65 to +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Specification Parameter Unit Condition Min. Typ. Max. ESD Requirements Human Body Model 2000 V DC Pins 1500 V All Pins Charge Device Model 1000 V All Pins Operating Conditions Supply Voltage (V)2.7 3.3V DD Temperature -40 +85 C Logic Inputs/Outputs (V = Supply to DIG VDD pin) DD Input Low voltage -0.3 +0.5 V Input High voltage V / 1.5 V V DD DD Input Low current -10 +10 AInput = 0V Input High current -10 +10 AInput = V DD Output Low voltage 0 0.2*V V DD Output High voltage 0.8*V V V DD DD Load Resistance 10 k Load Capacitance 20 pF GPO Drive Capability Sink Current 20 mA At V = +0.6V OL Source Current 20 mA At V = +2.4V OL Output Impedance 25 Static Supply Current (I ) 135 mA 1.3V Input DC Bias DD Standby 2 mA Reference Oscillator and Bandgap Only Power Down Current 300 A ENBL = 0 and REF STBY = 0 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 18 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS140110