RFOS601X RFOS601X GaAs Optical Receiver 45MHz to 1200MHz Package: SOT-115J RFOS601X is a hybrid high dynamic range optical receiver module. Two of the module pins are for connection to 24V (DC), Features one for amplifier supply voltage, the other for the PIN diode bias. Superior Return Loss Performance The module contains a single mode optical input suitable for Extremely Low Distortion wavelengths from 1290nm to 1600nm, a terminal to monitor the PIN diode current and an electrical output with an impedance of Optimal Reliability 7 5 . Very Low EINC BIAS V+ 30.0dB A/W Min. at 1200MHz 250mA Max. at 24V+ OUTPUT Applications OPTICAL INPUT 45MHz to 1200MHz CATV MONITOR Amplifier Systems Ordering Information RFOS6012 Box with 3 Pieces RFOS6013 Box with 3 Pieces See Page 3 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Optical Input Power 5 mW DC Supply Over-Voltage (5 minutes) 30 V RoHS (Restriction of Hazardous ESD Sensitivity, Acc. MIL-Standard 1686C 500 V Substances): Compliant per EU Directive (human body model R = 1.5k , C = 100pF) 2011/65/EU. Storage Temperature -40 to +85 C Operating Mounting Base Temperature -20 to +85 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent Minimum Fiber Bending Radius 35 mm damage to the device. Extended application of Absolute Maximum Tensile Strength 5 N Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140306 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 1 of 4 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. RFOS601X Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max General Performance V+ = 24V T = 30C Z = 75 MB L 2400 2650 V/W Responsivity f = 1200MHz, = 1310nm 30.0 31.0 dB A/W 1 Slope 0 2 dB f = 45MHz to 1200MHz Flatness of O/E Response <0.7 1.0 dB f = 45MHz to 1200MHz (peak to valley) Optical Return Loss 45 dB Output Return Loss 15 17 dB f = 45MHz to 1200MHz Equivalent Input Noise 4.2 4.6 pA/ Hz f = 50MHz to 1200MHz 0.90 A/W = (1310 20)nm Spectral Sensitivity 0.90 A/W = (1550 20)nm Optical Wavelength 1290 1600 nm Total DC Current 245 250 mA module pin 4 and pin 5 connected to V+ PIN Diode Bias Current 1.5 5 mA Distortion Data V+ = 24V T = 30C Z = 75 MB L 2 Second Order Distortion -75 -71 dBc fm = 54MHz f1 = 187.25MHz f2 = 133.25MHz -75 -70 dBc fm = 446.5MHz f1 = 97.25MHz f2 = 349.25MHz -70 -65 dBc fm = 548.5MHz f1 = 109.25MHz f2 = 439.25MHz -68 -63 dBc fm = 746.5MHz f1 = 133.25MHz f2 = 613.25MHz -68 -63 dBc fm = 854.5MHz f1 = 133.25MHz f2 = 721.25MHz -66 -63 dBc fm = 986.5MHz f1 = 133.25MHz f2 = 853.25MHz 3 Third Order Distortion -78 -75 dBc fm = 55.25MHz f1 = 109.25MHz f2 = 133.25MHz f3 = 187.25MHz -78 -75 dBc fm = 445.25MHz f1 = 193.25MHz f2 = 349.25MHz f3 = 97.25MHz -78 -75 dBc fm = 547.25MHz f1 = 217.25MHz f2 = 439.2MHz f3 = 109.25MHz -78 -75 dBc fm = 745.25MHz f1 = 133.25MHz f2 = 265.25MHz f3 = 613.25MHz -78 -75 dBc fm = 853.25MHz f1 = 133.25MHz f2 = 265.25MHz f3 = 721.25MHz -78 -75 dBc fm = 985.25MHz f1 = 133.25MHz f2 = 265.25MHz f3 = 853.25MHz 1. The slope is defined as the difference between the O/E response at the start frequency (45MHz) and the O/E response at the stop frequency (1200MHz). 2. Two laser test each laser with 40% OMI Popt = 1mW (total). 3. Three laser test each laser with 60% OMI Popt = 1mW (total). RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140306 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 4